Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die

Wei Su; Jiaming Liu; Xianfeng Liang; Mengmeng Guan; Jieqiang Gao; Haifeng Gao; Zhiguang Wang; Jinghong Guo; Zhongqiang Hu; Ming Liu

doi:10.1109/TED.2025.3579462

Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die

Wei Su
, Jiaming Liu
, Xianfeng Liang
, Mengmeng Guan
, Jieqiang Gao
, Haifeng Gao
, Zhiguang Wang
, Jinghong Guo
, Zhongqiang Hu
, Ming Liu

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.

Original language	English
Pages (from-to)	4576-4579
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	8
DOIs	https://doi.org/10.1109/TED.2025.3579462
State	Published - 2025

Keywords

Anti-interference
full Wheatstone bridge
magnetic field sensor
tunneling magnetoresistive (TMR)
vortex magnetic state

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10.1109/TED.2025.3579462

Cite this

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title = "Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die",

abstract = "In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.",

keywords = "Anti-interference, full Wheatstone bridge, magnetic field sensor, tunneling magnetoresistive (TMR), vortex magnetic state",

author = "Wei Su and Jiaming Liu and Xianfeng Liang and Mengmeng Guan and Jieqiang Gao and Haifeng Gao and Zhiguang Wang and Jinghong Guo and Zhongqiang Hu and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2025.3579462",

language = "英语",

volume = "72",

pages = "4576--4579",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die

AU - Su, Wei

AU - Liu, Jiaming

AU - Liang, Xianfeng

AU - Guan, Mengmeng

AU - Gao, Jieqiang

AU - Gao, Haifeng

AU - Wang, Zhiguang

AU - Guo, Jinghong

AU - Hu, Zhongqiang

AU - Liu, Ming

PY - 2025

Y1 - 2025

N2 - In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.

AB - In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.

KW - Anti-interference

KW - full Wheatstone bridge

KW - magnetic field sensor

KW - tunneling magnetoresistive (TMR)

KW - vortex magnetic state

UR - https://www.scopus.com/pages/publications/105010679960

U2 - 10.1109/TED.2025.3579462

DO - 10.1109/TED.2025.3579462

M3 - 文章

AN - SCOPUS:105010679960

SN - 0018-9383

VL - 72

SP - 4576

EP - 4579

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die

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Keywords

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