Freestanding GaN-based light-emitting diode membranes on Y3Al5O12:Ce3+ crystal phosphor plate for efficient white light emission

  • Lungang Feng
  • , Yufeng Li
  • , Han Xiong
  • , Shuai Wang
  • , Jiangteng Wang
  • , Wen Ding
  • , Ye Zhang
  • , Feng Yun

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

GaN-based light-emitting diode (LED) membranes were peeled from the substrate using electrochemical etching of the bottom sacrificial layer. The freestanding membranes were transferred onto a Y3Al5O12:Ce3+ (YAG:Ce3+) crystal phosphor plate to realize a compact white light source. Verified by the Raman test, the initial strain within the original GaN layers was greatly released after the exfoliation process, which induced alleviation of the quantum confined stark effect. The electroluminescence measurement of a blue LED membranes-on-YAG:Ce3+ plate-structured device was conducted exhibiting color coordinates and a correlated color temperature of (0:3367; 0:4525) and 5450K at 10mA, respectively.

Original languageEnglish
Article number081003
JournalApplied Physics Express
Volume9
Issue number8
DOIs
StatePublished - Aug 2016

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