Abstract
GaN-based light-emitting diode (LED) membranes were peeled from the substrate using electrochemical etching of the bottom sacrificial layer. The freestanding membranes were transferred onto a Y3Al5O12:Ce3+ (YAG:Ce3+) crystal phosphor plate to realize a compact white light source. Verified by the Raman test, the initial strain within the original GaN layers was greatly released after the exfoliation process, which induced alleviation of the quantum confined stark effect. The electroluminescence measurement of a blue LED membranes-on-YAG:Ce3+ plate-structured device was conducted exhibiting color coordinates and a correlated color temperature of (0:3367; 0:4525) and 5450K at 10mA, respectively.
| Original language | English |
|---|---|
| Article number | 081003 |
| Journal | Applied Physics Express |
| Volume | 9 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2016 |