TY - GEN
T1 - Four control freedoms AGD for hybrid SiC MOSFET and Si IGBT application
AU - Wei, Yuqi
AU - Woldegiorgis, Dereje
AU - Sweeting, Rosten
AU - Mantooth, Alan
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/14
Y1 - 2021/6/14
N2 - Silicon carbide (SiC) MOSFET features low switching loss and it is advantageous in high switching frequency application, but the manufacture per Ampere cost is approximately five times higher than the silicon (Si) IGBT. Therefore, by paralleling Si IGBT and SiC MOSFET together, a trade-off between cost and loss is achieved. In this paper, a four control freedoms active gate driver (AGD) including turn-on delay, turn-off delay, and two independent gate voltages, is proposed to optimize the performance of the paralleled device. By adjusting these four control freedoms, optimal operation for paralleled device can be obtained. Moreover, the proposed AGD can dynamically adjust the current ratio between two paralleled devices, which can help achieve thermal balance between two devices and improve system reliability. Double pulse test (DPT) experimental results are presented and analyzed to validate the effectiveness of the proposed AGD for paralleled Si IGBT and SiC MOSFET application.
AB - Silicon carbide (SiC) MOSFET features low switching loss and it is advantageous in high switching frequency application, but the manufacture per Ampere cost is approximately five times higher than the silicon (Si) IGBT. Therefore, by paralleling Si IGBT and SiC MOSFET together, a trade-off between cost and loss is achieved. In this paper, a four control freedoms active gate driver (AGD) including turn-on delay, turn-off delay, and two independent gate voltages, is proposed to optimize the performance of the paralleled device. By adjusting these four control freedoms, optimal operation for paralleled device can be obtained. Moreover, the proposed AGD can dynamically adjust the current ratio between two paralleled devices, which can help achieve thermal balance between two devices and improve system reliability. Double pulse test (DPT) experimental results are presented and analyzed to validate the effectiveness of the proposed AGD for paralleled Si IGBT and SiC MOSFET application.
KW - Active gate driver
KW - Hybrid switch
KW - Si IGBT
KW - SiC MOSFET
UR - https://www.scopus.com/pages/publications/85115686768
U2 - 10.1109/APEC42165.2021.9487290
DO - 10.1109/APEC42165.2021.9487290
M3 - 会议稿件
AN - SCOPUS:85115686768
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2211
EP - 2216
BT - 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Y2 - 14 June 2021 through 17 June 2021
ER -