Formation of magnetite in bismuth ferrrite under voltage stressing

X. J. Lou; C. X. Yang; T. A. Tang; Y. Y. Lin; M. Zhang; J. F. Scott

doi:10.1063/1.2752724

Formation of magnetite in bismuth ferrrite under voltage stressing

X. J. Lou
, C. X. Yang
, T. A. Tang
, Y. Y. Lin
, M. Zhang
, J. F. Scott

University of Cambridge
Fudan University

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Micro-Raman studies show that under ∼700 kVcm of dc voltage stressing for a few seconds, magnetite Fe3 O4 forms in thin-film bismuth ferrite BiFe O3, probably due to phase separation. No evidence is found spectroscopically of hemite α- Fe2 O3, maghemite γ- Fe2 O3, or Bi2 O3. This may relate to the controversy regarding the magnitude of magnetization in BiFe O3.

Original language	English
Article number	262908
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2752724
State	Published - 2007
Externally published	Yes

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10.1063/1.2752724

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title = "Formation of magnetite in bismuth ferrrite under voltage stressing",

abstract = "Micro-Raman studies show that under ∼700 kVcm of dc voltage stressing for a few seconds, magnetite Fe3 O4 forms in thin-film bismuth ferrite BiFe O3, probably due to phase separation. No evidence is found spectroscopically of hemite α- Fe2 O3, maghemite γ- Fe2 O3, or Bi2 O3. This may relate to the controversy regarding the magnitude of magnetization in BiFe O3.",

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journal = "Applied Physics Letters",

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AU - Lou, X. J.

AU - Yang, C. X.

AU - Tang, T. A.

AU - Lin, Y. Y.

AU - Zhang, M.

AU - Scott, J. F.

PY - 2007

Y1 - 2007

N2 - Micro-Raman studies show that under ∼700 kVcm of dc voltage stressing for a few seconds, magnetite Fe3 O4 forms in thin-film bismuth ferrite BiFe O3, probably due to phase separation. No evidence is found spectroscopically of hemite α- Fe2 O3, maghemite γ- Fe2 O3, or Bi2 O3. This may relate to the controversy regarding the magnitude of magnetization in BiFe O3.

AB - Micro-Raman studies show that under ∼700 kVcm of dc voltage stressing for a few seconds, magnetite Fe3 O4 forms in thin-film bismuth ferrite BiFe O3, probably due to phase separation. No evidence is found spectroscopically of hemite α- Fe2 O3, maghemite γ- Fe2 O3, or Bi2 O3. This may relate to the controversy regarding the magnitude of magnetization in BiFe O3.

UR - https://www.scopus.com/pages/publications/34547252602

U2 - 10.1063/1.2752724

DO - 10.1063/1.2752724

M3 - 文章

AN - SCOPUS:34547252602

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Formation of magnetite in bismuth ferrrite under voltage stressing

Abstract

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