Abstract
The important application potential of flexible energy storage materials in new portable and wearable electronic devices has aroused a research upsurge in performance optimization. Here, the flexible (1−x)Na0.5Bi0.5TiO3−xBi(Mg0.5Zr0.5)O3 (NBT-xBMZ) film capacitors were obtained via a simple sol–gel method based on a nickel foil substrate. The addition of BMZ content strengthens the relaxor behavior of NBT-based film, which is conducive to producing substantial polarization differences (Pmax−Pr). Mg2+ and Zr4+, on the other hand, help to minimize leakage current density and boost breakdown field strength (BDS). As a result, a large recoverable energy storage density of ~ 51.5 J cm− 3 with a large energy efficiency of 60.4% under 2000 kV cm− 1 was detected in the flexible film for x = 0.4. In addition, the NBT-0.4BMZ film exhibits great frequency (1–5 kHz), temperature (25–205 °C) stability, and antifatigue property (105 cycles). Besides, the energy storage performances in NBT-0.4BMZ films are almost free from the mechanical bending processes even if it is cycled for 20,000 times at a small radii of 2 mm. The results indicate that the NBT-0.4BMZ flexible film is a promising energy storage material for the flexible electronics fields.
| Original language | English |
|---|---|
| Article number | 604 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 34 |
| Issue number | 7 |
| DOIs | |
| State | Published - Mar 2023 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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