Field emission performance of bulk graphene

Qianyu Ji; Bowen Wang; Yajuan Zheng; Fanguang Zeng; Bingheng Lu

doi:10.1016/j.diamond.2022.108940

Field emission performance of bulk graphene

Qianyu Ji
, Bowen Wang
, Yajuan Zheng
, Fanguang Zeng
, Bingheng Lu

School of Mechanical Engineering

Xi'an Jiaotong University
Zhengzhou University of Aeronautics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Graphene is an upcoming field emission material. However, graphene based thin film devices are prone to irreversible damage, and the stability for long-term operation is poor. In this study, bulk graphene emitter has been proposed for the first time. The emitter was generated by cold pressing using high quality graphene. The novel bulk emitter exhibited an outstanding field emission performance with the turn-on electric field (at 100 μA/cm²) and threshold electric field (at 10 mA/cm²) values determined to be 0.73 V/μm and 1.09 V/μm, respectively, along with a maximum current density of 715.51 mA/cm². Besides, a stable emission of 209.78 mA/cm² was obtained continuously for over 60 h. The self-compensation electron emission mechanism of bulk graphene was proposed based on the morphological changes and simulation results.

Original language	English
Article number	108940
Journal	Diamond and Related Materials
Volume	124
DOIs	https://doi.org/10.1016/j.diamond.2022.108940
State	Published - Apr 2022

Keywords

Bulk graphene
Cold pressing
Field emission
Self-compensation effect

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10.1016/j.diamond.2022.108940

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title = "Field emission performance of bulk graphene",

abstract = "Graphene is an upcoming field emission material. However, graphene based thin film devices are prone to irreversible damage, and the stability for long-term operation is poor. In this study, bulk graphene emitter has been proposed for the first time. The emitter was generated by cold pressing using high quality graphene. The novel bulk emitter exhibited an outstanding field emission performance with the turn-on electric field (at 100 μA/cm2) and threshold electric field (at 10 mA/cm2) values determined to be 0.73 V/μm and 1.09 V/μm, respectively, along with a maximum current density of 715.51 mA/cm2. Besides, a stable emission of 209.78 mA/cm2 was obtained continuously for over 60 h. The self-compensation electron emission mechanism of bulk graphene was proposed based on the morphological changes and simulation results.",

keywords = "Bulk graphene, Cold pressing, Field emission, Self-compensation effect",

author = "Qianyu Ji and Bowen Wang and Yajuan Zheng and Fanguang Zeng and Bingheng Lu",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = apr,

doi = "10.1016/j.diamond.2022.108940",

language = "英语",

volume = "124",

journal = "Diamond and Related Materials",

issn = "0925-9635",

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TY - JOUR

T1 - Field emission performance of bulk graphene

AU - Ji, Qianyu

AU - Wang, Bowen

AU - Zheng, Yajuan

AU - Zeng, Fanguang

AU - Lu, Bingheng

PY - 2022/4

Y1 - 2022/4

N2 - Graphene is an upcoming field emission material. However, graphene based thin film devices are prone to irreversible damage, and the stability for long-term operation is poor. In this study, bulk graphene emitter has been proposed for the first time. The emitter was generated by cold pressing using high quality graphene. The novel bulk emitter exhibited an outstanding field emission performance with the turn-on electric field (at 100 μA/cm2) and threshold electric field (at 10 mA/cm2) values determined to be 0.73 V/μm and 1.09 V/μm, respectively, along with a maximum current density of 715.51 mA/cm2. Besides, a stable emission of 209.78 mA/cm2 was obtained continuously for over 60 h. The self-compensation electron emission mechanism of bulk graphene was proposed based on the morphological changes and simulation results.

AB - Graphene is an upcoming field emission material. However, graphene based thin film devices are prone to irreversible damage, and the stability for long-term operation is poor. In this study, bulk graphene emitter has been proposed for the first time. The emitter was generated by cold pressing using high quality graphene. The novel bulk emitter exhibited an outstanding field emission performance with the turn-on electric field (at 100 μA/cm2) and threshold electric field (at 10 mA/cm2) values determined to be 0.73 V/μm and 1.09 V/μm, respectively, along with a maximum current density of 715.51 mA/cm2. Besides, a stable emission of 209.78 mA/cm2 was obtained continuously for over 60 h. The self-compensation electron emission mechanism of bulk graphene was proposed based on the morphological changes and simulation results.

KW - Bulk graphene

KW - Cold pressing

KW - Field emission

KW - Self-compensation effect

UR - https://www.scopus.com/pages/publications/85125642186

U2 - 10.1016/j.diamond.2022.108940

DO - 10.1016/j.diamond.2022.108940

M3 - 文章

AN - SCOPUS:85125642186

SN - 0925-9635

VL - 124

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 108940

ER -

Field emission performance of bulk graphene

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Keywords

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