Femtosecond laser treatment of SWNT onto metal electrodes and its effect on carbon nanotube field effect transistor

With unique electrical, mechanical, and thermal properties, carbon nanotubes (CNTs) have possessed the potential to be the ideal next-generation semiconductor in very large scale integration (VLSI). However, the extremely large schottky contact resistance generated by the interface between CNTs and metal electrodes has recently become a stricky constraint, which can greatly affect the transmission of current. In this paper, we used femtosecond laser to join the CNTs and the metal electrodes. The interconnect quality was investigated under different settings of laser power and scanning speed. Then, the carbon nanotubes field effect transistor (CNFET) based on a single CNT was fabricated and its electrical performance after laser induced interconnect was characterized. It is shown that the operating current of CNFET after irradiation is approximately 1.5 times that of before irradiation.