FEM applied to evaluate composite hardness of SiO2 Film/316 LSS substrate system

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Abstract

Due to non-ideal tip, performance of instrument and substrate effect, it is difficult to evaluate either composite mechanical properties of thin film/substrate system or the pure film's properties. In order to get composite hardness of thin film and how the substrate takes effect of the film's properties, FEM is used to simulate the indentation process of SiO2 thin films on 316LSS. With experiments, we observe that the hardness heavily depends the thickness of SiO2 film with different thickness deposited on 316 LSS by PVD. By FEM simulation and calculation, composite hardness is found to decrease greatly with increasing indentation depth. As thickness of film keeps constant, there exists a critical indentation depth about 1/20 of film thickness, less than which composite hardness may be regarded as film hardness. Discussion indicates FEM analysis method in this paper may not only play role in determining composite hardness of thin film/hardness system, but also provide a method to calculate pure hardness of thin film.

Original languageEnglish
Article number203
Pages (from-to)1090-1095
Number of pages6
JournalJournal of Physics: Conference Series
Volume48
Issue number1
DOIs
StatePublished - 1 Oct 2006

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