Fabrication of ZnO thin-film transistors by L-MBE

Xin'an Zhang; Jingwen Zhang; Xiaodong Yang; Hui Lou; Zhenling Liu; Weifeng Zhang; Xun Hou

Fabrication of ZnO thin-film transistors by L-MBE

Xin'an Zhang
, Jingwen Zhang
, Xiaodong Yang
, Hui Lou
, Zhenling Liu
, Weifeng Zhang
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

High quality ZnO films are deposited on SiN_x/Si substrate by laser molecular beam epitaxy (L-MBE). XRD and AFM are used to investigate the crystallite and surface of the films, respectively. The results show that the films are homogeneous and crack-free with highly preferred c orientation. We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5 V and a mobility rate as high as 1.05 cm²/(V·s).

Original language	English
Pages (from-to)	1051-1054
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	6
State	Published - Jun 2006

Keywords

L-MBE
Thin film transistor
ZnO thin films

Cite this

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title = "Fabrication of ZnO thin-film transistors by L-MBE",

abstract = "High quality ZnO films are deposited on SiNx/Si substrate by laser molecular beam epitaxy (L-MBE). XRD and AFM are used to investigate the crystallite and surface of the films, respectively. The results show that the films are homogeneous and crack-free with highly preferred c orientation. We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5 V and a mobility rate as high as 1.05 cm2/(V·s).",

keywords = "L-MBE, Thin film transistor, ZnO thin films",

author = "Xin'an Zhang and Jingwen Zhang and Xiaodong Yang and Hui Lou and Zhenling Liu and Weifeng Zhang and Xun Hou",

year = "2006",

month = jun,

language = "英语",

volume = "27",

pages = "1051--1054",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "6",

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TY - JOUR

T1 - Fabrication of ZnO thin-film transistors by L-MBE

AU - Zhang, Xin'an

AU - Zhang, Jingwen

AU - Yang, Xiaodong

AU - Lou, Hui

AU - Liu, Zhenling

AU - Zhang, Weifeng

AU - Hou, Xun

PY - 2006/6

Y1 - 2006/6

N2 - High quality ZnO films are deposited on SiNx/Si substrate by laser molecular beam epitaxy (L-MBE). XRD and AFM are used to investigate the crystallite and surface of the films, respectively. The results show that the films are homogeneous and crack-free with highly preferred c orientation. We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5 V and a mobility rate as high as 1.05 cm2/(V·s).

AB - High quality ZnO films are deposited on SiNx/Si substrate by laser molecular beam epitaxy (L-MBE). XRD and AFM are used to investigate the crystallite and surface of the films, respectively. The results show that the films are homogeneous and crack-free with highly preferred c orientation. We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5 V and a mobility rate as high as 1.05 cm2/(V·s).

KW - L-MBE

KW - Thin film transistor

KW - ZnO thin films

UR - https://www.scopus.com/pages/publications/33747831877

M3 - 文章

AN - SCOPUS:33747831877

SN - 0253-4177

VL - 27

SP - 1051

EP - 1054

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 6

ER -

Fabrication of ZnO thin-film transistors by L-MBE

Abstract

Keywords

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