Fabrication of X-ray lithography masks utilizing MEMS technology

We fabricated two kinds of Si X-ray masks only in a dry etching without electroplating and chemical etching. The first mask is a stencil X-ray mask without a membrane. An X-ray absorber of thickness 30 urn with vertical sidewalls was able to be fabricated. The second mask is an X-ray mask with a Si membrane. The thickness of the X-ray absorber and the membrane is 30 Urn and 5 μm, respectively. In addition, we succeeded in demonstration of the X-ray lithography in the beam line BL-4 of the synchrotron radiation acuity TERAS of AIST using the Si stencil X-ray mask. Line and space patterns with the line width 2 -200 μm were transcribed plainly on the surface of a PMMA sheet It was confirmed that the edge of PMMA microstructures was sharp by SEM observation.