Fabrication of UV Photodetector on TiO 2 /Diamond Film

Zhangcheng Liu; Fengnan Li; Shuoye Li; Chao Hu; Wei Wang; Fei Wang; Fang Lin; Hongxing Wang

doi:10.1038/srep14420

Fabrication of UV Photodetector on TiO ₂ /Diamond Film

Zhangcheng Liu
, Fengnan Li
, Shuoye Li
, Chao Hu
, Wei Wang
, Fei Wang
, Fang Lin
, Hongxing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

The properties of ultraviolet (UV) photodetector fabricated on TiO 2 /diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-Temperature Ib-Type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO 2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O 2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12a €‰pA at 30a €‰V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-To-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO 2 /diamond film shows higher responsivity.

Original language	English
Article number	14420
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep14420
State	Published - 24 Sep 2015

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title = "Fabrication of UV Photodetector on TiO 2 /Diamond Film",

abstract = "The properties of ultraviolet (UV) photodetector fabricated on TiO 2 /diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-Temperature Ib-Type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO 2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O 2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12a €‰pA at 30a €‰V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-To-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO 2 /diamond film shows higher responsivity.",

author = "Zhangcheng Liu and Fengnan Li and Shuoye Li and Chao Hu and Wei Wang and Fei Wang and Fang Lin and Hongxing Wang",

year = "2015",

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day = "24",

doi = "10.1038/srep14420",

language = "英语",

volume = "5",

journal = "Scientific Reports",

issn = "2045-2322",

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T1 - Fabrication of UV Photodetector on TiO 2 /Diamond Film

AU - Liu, Zhangcheng

AU - Li, Fengnan

AU - Li, Shuoye

AU - Hu, Chao

AU - Wang, Wei

AU - Wang, Fei

AU - Lin, Fang

AU - Wang, Hongxing

PY - 2015/9/24

Y1 - 2015/9/24

N2 - The properties of ultraviolet (UV) photodetector fabricated on TiO 2 /diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-Temperature Ib-Type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO 2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O 2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12a €‰pA at 30a €‰V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-To-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO 2 /diamond film shows higher responsivity.

AB - The properties of ultraviolet (UV) photodetector fabricated on TiO 2 /diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-Temperature Ib-Type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO 2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O 2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12a €‰pA at 30a €‰V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-To-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO 2 /diamond film shows higher responsivity.

UR - https://www.scopus.com/pages/publications/84942133465

U2 - 10.1038/srep14420

DO - 10.1038/srep14420

M3 - 文章

AN - SCOPUS:84942133465

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 14420

ER -

Fabrication of UV Photodetector on TiO ₂ /Diamond Film

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