@inproceedings{cfa96964a7e54c07b07d01128d6412f3,
title = "Fabrication of three dimensional X-ray mask using MEMS technology",
abstract = "We fabricated silicon microstructures with inclined sidewalls on the SOI wafer by using tapered-RIE technique. Then, this wafer was processed to an X-ray mask that made the silicon structure an X-ray absorber. The inclined angle of the sidewall of silicon X-ray absorbers has been changed from 60 to 71 degrees by adjusting the pressure of the mixed gas in the process chamber of the ICP-RIE system. The thickness distribution of the X-ray absorber is different according to the difference of the inclined angle of the X-ray absorber. As a result, the transmission intensity of X-rays is locally changed, and the energy distribution of X-rays irradiated on a resist can be controlled. We experimented on the X-ray lithography using this X-ray gray mask and the beamline BL-4 in the synchrotron radiation facility TERAS of AIST. As a result, we succeeded in fabrication of three-dimensional PMMA microstructures by only one X-ray exposure without scanning and rotating the X-ray exposure stage.",
keywords = "Masks, Plasma materials-processing applications, Silicon on insulator technology, X-ray lithography",
author = "Harutaka Mekaru and Takayuki Takano and Koichi Awazu and Masaharu Takahashi and Ryutaro Maeda",
year = "2007",
doi = "10.1109/NEMS.2007.352056",
language = "英语",
isbn = "1424406102",
series = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",
pages = "447--451",
booktitle = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",
note = "2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 ; Conference date: 16-01-2007 Through 19-01-2007",
}