Fabrication of poly-Si TFTs on flexible quartz fibers

A. Mimura; T. Nakamura; Y. Sugawara; Y. Uraoka; I. Shuu; T. Ikehara; T. Itoh; R. Maeda; K. Suzuki; A. Nakajima; H. Koaizawa

doi:10.1149/1.2980570

Fabrication of poly-Si TFTs on flexible quartz fibers

A. Mimura
, T. Nakamura
, Y. Sugawara
, Y. Uraoka
, I. Shuu
, T. Ikehara
, T. Itoh
, R. Maeda
, K. Suzuki
, A. Nakajima
, H. Koaizawa

School of Instrument Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Flexible quartz fibers (cross-section: 1 mm × 0.1 mm) were developed as one-dimensional substrates for fiber-electronic devices such as OLEDs. Fine and uniform poly-Si films were deposited on moving fibers in an open-tube CVD system. Si films (thicknesses: 50 nm and 100 nm) were directly re-crystallized by green laser annealing without ablation. Top-gate type TFTs were fabricated and proper operation was confirmed with the electron field effect mobility of 177 cm²/Vs.

Original language	English
Title of host publication	ECS Transactions - Thin Film Transistors 9, TFT 9
Publisher	Electrochemical Society Inc.
Pages	325-331
Number of pages	7
Edition	9
ISBN (Print)	9781566776554
DOIs	https://doi.org/10.1149/1.2980570
State	Published - 2009
Event	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 13 Oct 2008 → 16 Oct 2008

Publication series

Name	ECS Transactions
Number	9
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	13/10/08 → 16/10/08

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10.1149/1.2980570

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Mimura, A., Nakamura, T., Sugawara, Y., Uraoka, Y., Shuu, I., Ikehara, T., Itoh, T., Maeda, R., Suzuki, K., Nakajima, A., & Koaizawa, H. (2009). Fabrication of poly-Si TFTs on flexible quartz fibers. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 325-331). (ECS Transactions; Vol. 16, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/1.2980570

@inproceedings{eed6dcce2017432a887058202c198068,

title = "Fabrication of poly-Si TFTs on flexible quartz fibers",

abstract = "Flexible quartz fibers (cross-section: 1 mm × 0.1 mm) were developed as one-dimensional substrates for fiber-electronic devices such as OLEDs. Fine and uniform poly-Si films were deposited on moving fibers in an open-tube CVD system. Si films (thicknesses: 50 nm and 100 nm) were directly re-crystallized by green laser annealing without ablation. Top-gate type TFTs were fabricated and proper operation was confirmed with the electron field effect mobility of 177 cm2/Vs.",

author = "A. Mimura and T. Nakamura and Y. Sugawara and Y. Uraoka and I. Shuu and T. Ikehara and T. Itoh and R. Maeda and K. Suzuki and A. Nakajima and H. Koaizawa",

year = "2009",

doi = "10.1149/1.2980570",

language = "英语",

isbn = "9781566776554",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "325--331",

booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",

edition = "9",

note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",

}

Mimura, A, Nakamura, T, Sugawara, Y, Uraoka, Y, Shuu, I, Ikehara, T, Itoh, T, Maeda, R, Suzuki, K, Nakajima, A & Koaizawa, H 2009, Fabrication of poly-Si TFTs on flexible quartz fibers. in ECS Transactions - Thin Film Transistors 9, TFT 9. 9 edn, ECS Transactions, no. 9, vol. 16, Electrochemical Society Inc., pp. 325-331, Thin Film Transistors 9, TFT 9 - 214th ECS Meeting, Honolulu, HI, United States, 13/10/08. https://doi.org/10.1149/1.2980570

TY - GEN

T1 - Fabrication of poly-Si TFTs on flexible quartz fibers

AU - Mimura, A.

AU - Nakamura, T.

AU - Sugawara, Y.

AU - Uraoka, Y.

AU - Shuu, I.

AU - Ikehara, T.

AU - Itoh, T.

AU - Maeda, R.

AU - Suzuki, K.

AU - Nakajima, A.

AU - Koaizawa, H.

PY - 2009

Y1 - 2009

N2 - Flexible quartz fibers (cross-section: 1 mm × 0.1 mm) were developed as one-dimensional substrates for fiber-electronic devices such as OLEDs. Fine and uniform poly-Si films were deposited on moving fibers in an open-tube CVD system. Si films (thicknesses: 50 nm and 100 nm) were directly re-crystallized by green laser annealing without ablation. Top-gate type TFTs were fabricated and proper operation was confirmed with the electron field effect mobility of 177 cm2/Vs.

AB - Flexible quartz fibers (cross-section: 1 mm × 0.1 mm) were developed as one-dimensional substrates for fiber-electronic devices such as OLEDs. Fine and uniform poly-Si films were deposited on moving fibers in an open-tube CVD system. Si films (thicknesses: 50 nm and 100 nm) were directly re-crystallized by green laser annealing without ablation. Top-gate type TFTs were fabricated and proper operation was confirmed with the electron field effect mobility of 177 cm2/Vs.

UR - https://www.scopus.com/pages/publications/63149130891

U2 - 10.1149/1.2980570

DO - 10.1149/1.2980570

M3 - 会议稿件

AN - SCOPUS:63149130891

SN - 9781566776554

T3 - ECS Transactions

SP - 325

EP - 331

BT - ECS Transactions - Thin Film Transistors 9, TFT 9

PB - Electrochemical Society Inc.

T2 - Thin Film Transistors 9, TFT 9 - 214th ECS Meeting

Y2 - 13 October 2008 through 16 October 2008

ER -

Fabrication of poly-Si TFTs on flexible quartz fibers

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