Fabrication of poly-Si TFTs on fine quartz fibers for display applications

A. Mimura; Y. Sugawara; M. Hiroshima; T. Ikehara; R. Maeda; K. Suzuki; K. Yase; I. Shuu; A. Nakajima; S. Toda; H. Koaizawa

Fabrication of poly-Si TFTs on fine quartz fibers for display applications

A. Mimura
, Y. Sugawara
, M. Hiroshima
, T. Ikehara
, R. Maeda
, K. Suzuki
, K. Yase
, I. Shuu
, A. Nakajima
, S. Toda
, H. Koaizawa

National Institute of Advanced Industrial Science and Technology
Nara Institute of Science and Technology
Furukawa Electric Co., Ltd.

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

Original language	English
Pages	1975-1976
Number of pages	2
State	Published - 2007
Externally published	Yes
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 5 Dec 2007 → 5 Dec 2007

Conference

Conference	14th International Display Workshops, IDW '07
Country/Territory	Japan
City	Sapporo
Period	5/12/07 → 5/12/07

Cite this

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title = "Fabrication of poly-Si TFTs on fine quartz fibers for display applications",

abstract = "Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.",

author = "A. Mimura and Y. Sugawara and M. Hiroshima and T. Ikehara and R. Maeda and K. Suzuki and K. Yase and I. Shuu and A. Nakajima and S. Toda and H. Koaizawa",

year = "2007",

language = "英语",

pages = "1975--1976",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

}

TY - CONF

T1 - Fabrication of poly-Si TFTs on fine quartz fibers for display applications

AU - Mimura, A.

AU - Sugawara, Y.

AU - Hiroshima, M.

AU - Ikehara, T.

AU - Maeda, R.

AU - Suzuki, K.

AU - Yase, K.

AU - Shuu, I.

AU - Nakajima, A.

AU - Toda, S.

AU - Koaizawa, H.

PY - 2007

Y1 - 2007

N2 - Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

AB - Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

UR - https://www.scopus.com/pages/publications/43349107125

M3 - 论文

AN - SCOPUS:43349107125

SP - 1975

EP - 1976

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

Fabrication of poly-Si TFTs on fine quartz fibers for display applications

Abstract

Conference

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