Abstract
N-doped Ta2O5 catalyst with strong visible-light response was prepared by the temperature-programmed nitridation of tantalum pentoxide and characterized using XRD, UV-Vis, XRF, and SEM. The absorption edge of the catalyst is about 630 nm and the energy gap is about 2.0 eV. The activities of hydrogen production for the N-doped Ta2O5 catalysts were studied by water splitting in the aqueous ethanol or Na2S-Na2SO3 solution under the visible light irradiation. The relationship between the amount of loading Ru and the rate of hydrogen evolution were investigated. The results show that the efficiency of hydrogen evolution can be greatly improved by photo-depositing Ru on the surface of N-doped Ta2O5 catalysts and the optimal amount of loading Ru is about 0.1 wt.%.
| Original language | English |
|---|---|
| Pages (from-to) | 1032-1036 |
| Number of pages | 5 |
| Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
| Volume | 27 |
| Issue number | 10 |
| State | Published - Oct 2006 |
Keywords
- Doped
- Hydrogen
- Photocatalytic
- Semiconductor
- TaO