Fabrication of monolithic silicon multi-sensor on SOI wafer

A monolithic silicon multi-sensor on SOI wafer that consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor, and a silicon thermistor temperature sensor is presented. The fabrication process of the sensor is described. An effective micromachining process is developed to improve the reliability of the metal wire in the multi-sensor and to avoid adhesion between the PYREX glass and silicon mass in the process of anodic bonding. Finally, the measurement results of the sensor are shown.