Abstract
A hundreds of microns three-dimensional single crystal diamond (SCD) channel along with high aspect ratio has been fabricated successfully by two-step process. Firstly, laser machining technique was used to produce trenches in high-temperature high-pressure SCD substrate. Then, microchannels were achieved by epitaxial lateral overgrowth of diamond layer on patterned substrate by microwave plasma chemical vapor deposition system. Dimensional variations and crystalline quality around the microchannel cross section were analyzed using scanning electron microscopy and Raman spectroscopy. The hollowness and continuity of microchannels were also be tested. It is a significant step towards fabrication of hundreds of microns SCD channel along with controlled high aspect ratio by a simple and controllable way.
| Original language | English |
|---|---|
| Article number | 126556 |
| Journal | Materials Letters |
| Volume | 255 |
| DOIs | |
| State | Published - 15 Nov 2019 |
Keywords
- Epitaxial growth
- Heat sink
- Laser processing
- Microchannels
- Single crystal diamond
- Structural