Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

H. X. Wang; H. D. Li; Y. B. Lee; H. Sato; K. Yamashita; T. Sugahara; S. Sakai

doi:10.1016/j.jcrysgro.2003.12.030

Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

H. X. Wang
, H. D. Li
, Y. B. Lee
, H. Sato
, K. Yamashita
, T. Sugahara
, S. Sakai

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

High-performance 370nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different growth conditions of undoped n-side barrier and p-side barrier were chosen to sandwich the InGaN well layer in the LED samples. By using high-Al content and symmetric composition n- and p-side barriers, the output efficiency of our UV-LED has been greatly improved. An output power of 2.5mW at an injection current of 20mA was achieved.

Original language	English
Pages (from-to)	48-52
Number of pages	5
Journal	Journal of Crystal Growth
Volume	264
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.12.030
State	Published - 15 Mar 2004
Externally published	Yes

Keywords

A1. Characterization
A3. Metalorganic chemical vapor deposition
B1. GaN
B3. Ultraviolet light emitting diodes

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10.1016/j.jcrysgro.2003.12.030

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title = "Fabrication of high-performance 370 nm ultraviolet light-emitting diodes",

abstract = "High-performance 370nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different growth conditions of undoped n-side barrier and p-side barrier were chosen to sandwich the InGaN well layer in the LED samples. By using high-Al content and symmetric composition n- and p-side barriers, the output efficiency of our UV-LED has been greatly improved. An output power of 2.5mW at an injection current of 20mA was achieved.",

keywords = "A1. Characterization, A3. Metalorganic chemical vapor deposition, B1. GaN, B3. Ultraviolet light emitting diodes",

author = "Wang, \{H. X.\} and Li, \{H. D.\} and Lee, \{Y. B.\} and H. Sato and K. Yamashita and T. Sugahara and S. Sakai",

year = "2004",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2003.12.030",

language = "英语",

volume = "264",

pages = "48--52",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1-3",

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TY - JOUR

T1 - Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

AU - Wang, H. X.

AU - Li, H. D.

AU - Lee, Y. B.

AU - Sato, H.

AU - Yamashita, K.

AU - Sugahara, T.

AU - Sakai, S.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - High-performance 370nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different growth conditions of undoped n-side barrier and p-side barrier were chosen to sandwich the InGaN well layer in the LED samples. By using high-Al content and symmetric composition n- and p-side barriers, the output efficiency of our UV-LED has been greatly improved. An output power of 2.5mW at an injection current of 20mA was achieved.

AB - High-performance 370nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different growth conditions of undoped n-side barrier and p-side barrier were chosen to sandwich the InGaN well layer in the LED samples. By using high-Al content and symmetric composition n- and p-side barriers, the output efficiency of our UV-LED has been greatly improved. An output power of 2.5mW at an injection current of 20mA was achieved.

KW - A1. Characterization

KW - A3. Metalorganic chemical vapor deposition

KW - B1. GaN

KW - B3. Ultraviolet light emitting diodes

UR - https://www.scopus.com/pages/publications/1342306682

U2 - 10.1016/j.jcrysgro.2003.12.030

DO - 10.1016/j.jcrysgro.2003.12.030

M3 - 文章

AN - SCOPUS:1342306682

SN - 0022-0248

VL - 264

SP - 48

EP - 52

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

ER -

Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

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Keywords

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