Fabrication of glassy carbon molds using hydrogen silsequioxane patterned by electron beam lithography as O2 dry etching mask

  • Manabu Yasui
  • , Yoshinari Sugiyama
  • , Masaharu Takahashi
  • , Satoru Kaneko
  • , Jun Ichi Uegaki
  • , Yasuo Hirabayashi
  • , Koh Ichi Sugimoto
  • , Ryutaro Maeda

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Glass is a good candidate material for optical devices because of its enhanced optical properties, the technique of die machining has not been established for the hot embossing of glass. In this study, we used the glassy carbon (GC) mold for the hot embossing of glass. An inductively coupled plasma reactive ion etching (ICP-RIE) using oxygen plasma was employed for the submicron structuring of the GC mold. Hydrogen silsesquioxane (HSQ) is a negative-type electron beam (EB) resist used to be resistant to oxygen plasma. HSQ patterns drawn by electron beam lithography (EBL) were used as the O 2 dry etching mask. The etching selectivity between HSQ and GC was 35. The average of the extent of side etching was 40 nm at a depth of 300nm. The side etching functioning as the draft angle was caused mainly by oxygen radicals, because HSQ patterns remained even after GC patterns were side-etched. We confirmed that the GC mold fabricated by O2 dry etching can be used for glass hot embossing. Since the mold lubricant was not rubbed on the mold surface, GC is the appropriate mold material for Pyrex glass.

Original languageEnglish
Pages (from-to)5167-5170
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number6 PART 2
DOIs
StatePublished - 20 Jun 2008
Externally publishedYes

Keywords

  • Electron beam lithography
  • Glassy carbon
  • Hot embossing of glass
  • Hydrogen silsesquioxane
  • Oxygen dry etching
  • Pyrex glass

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