Abstract
Fabrication of dual-termination Schottky barrier diode (SBD DT ) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C 4 F 8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBD DT was achieved completely. SBD DT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (W O /W F ) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.
| Original language | English |
|---|---|
| Pages (from-to) | 411-416 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 457 |
| DOIs | |
| State | Published - 1 Nov 2018 |
Keywords
- Barrier height
- OT-/FT-diamond
- SBD
- Surface treatment
- XPS