Abstract
A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO 2 substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production.
| Original language | English |
|---|---|
| Pages (from-to) | 1971-1975 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 258 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1 Jan 2012 |
Keywords
- FET
- Graphene
- MEMS
- Narrow walls
- Sensor