Fabrication and Temperature Test of a Multi-Physics Coupling MEMS Sensor Chip

  • Jing Sun
  • , Guodong Zhang
  • , Wanming Wang
  • , Tengjiang Hu
  • , Yulong Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A multi-physics coupling MEMS sensor chip is put forward in this paper. The chip integrates Fabry-Pérot (F-P) cavity pressure sensing unit, AlN piezoelectric film and Pt thermistor. The fabrication begins with a silicon wafer and a BF33 glass wafer. Magnetron sputtering and lift-off process on silicon wafer are applied to realize multilayer films and patterning, AlN film and Pt film included. The lower electrode of piezoelectric module is exposed by ICP etching. Bottom reflectivity and thickness of F-P cavity are respectively controlled by deposited Al-SiO2 film and prepared SU-8 photoresist on glass wafer. The temperature test is applied after 3 hours' annealing at 300°C. The wire bonding package and three-wire bridge test scheme is adopted. The temperature coefficient of resistance is 1844 ppm/°C. The sensitivity is 0.2822 Ω/°C. The linearity is 1.65%. The resistance at 0°C is 153.1 Ω.

Original languageEnglish
Title of host publication2024 IEEE Sensors, SENSORS 2024 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350363517
DOIs
StatePublished - 2024
Event2024 IEEE Sensors, SENSORS 2024 - Kobe, Japan
Duration: 20 Oct 202423 Oct 2024

Publication series

NameProceedings of IEEE Sensors
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Conference

Conference2024 IEEE Sensors, SENSORS 2024
Country/TerritoryJapan
CityKobe
Period20/10/2423/10/24

Keywords

  • Aluminum nitride
  • F-P cavity
  • MEMS
  • Pt thermistor
  • sensor

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