Fabrication and optical properties of sol-gel derived interference coating for high power laser applications

Q. Y. Zhang; K. Pita; C. Q. Xu; W. X. Que; S. Hinooda; P. Thilakan

doi:10.1117/12.446543

Fabrication and optical properties of sol-gel derived interference coating for high power laser applications

Q. Y. Zhang
, K. Pita
, C. Q. Xu
, W. X. Que
, S. Hinooda
, P. Thilakan

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

A single layer sol-gel derived TiO₂ thin films and 6 periods SiO₂/TiO₂ multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-infrared-reflective coating for high power semiconductor laser applications. Crack free TiO₂ thin films having thickness of 80-150 nm, and refractive indices of 1.8-2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO₂ thin films on GaAs substrates have shown reflectance of ≤ 1% in the wavelength of about 808 nm. Thin films of TiO₂ and SiO₂ were also used to fabricate near infrared reflector on GaAs substrates. The reflector consisted of 6 SiO₂/TiO₂ bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of ≤2% in the wavelength range between 950 and 1100 nm has been obtained in the present multiplayer SiO₂/TiO₂ coating.

Original language	English
Pages (from-to)	168-172
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4594
DOIs	https://doi.org/10.1117/12.446543
State	Published - 2001
Externally published	Yes

Keywords

Anti-reflective coating
Near-infrared-reflective coating
Semiconductor
Semiconductor laser
Sol-gel

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10.1117/12.446543

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@article{a385adf0822143578703a23dcec0717b,

title = "Fabrication and optical properties of sol-gel derived interference coating for high power laser applications",

abstract = "A single layer sol-gel derived TiO2 thin films and 6 periods SiO2/TiO2 multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-infrared-reflective coating for high power semiconductor laser applications. Crack free TiO2 thin films having thickness of 80-150 nm, and refractive indices of 1.8-2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO2 thin films on GaAs substrates have shown reflectance of ≤ 1\% in the wavelength of about 808 nm. Thin films of TiO2 and SiO2 were also used to fabricate near infrared reflector on GaAs substrates. The reflector consisted of 6 SiO2/TiO2 bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of ≤2\% in the wavelength range between 950 and 1100 nm has been obtained in the present multiplayer SiO2/TiO2 coating.",

keywords = "Anti-reflective coating, Near-infrared-reflective coating, Semiconductor, Semiconductor laser, Sol-gel",

author = "Zhang, \{Q. Y.\} and K. Pita and Xu, \{C. Q.\} and Que, \{W. X.\} and S. Hinooda and P. Thilakan",

year = "2001",

doi = "10.1117/12.446543",

language = "英语",

volume = "4594",

pages = "168--172",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Fabrication and optical properties of sol-gel derived interference coating for high power laser applications

AU - Zhang, Q. Y.

AU - Pita, K.

AU - Xu, C. Q.

AU - Que, W. X.

AU - Hinooda, S.

AU - Thilakan, P.

PY - 2001

Y1 - 2001

N2 - A single layer sol-gel derived TiO2 thin films and 6 periods SiO2/TiO2 multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-infrared-reflective coating for high power semiconductor laser applications. Crack free TiO2 thin films having thickness of 80-150 nm, and refractive indices of 1.8-2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO2 thin films on GaAs substrates have shown reflectance of ≤ 1% in the wavelength of about 808 nm. Thin films of TiO2 and SiO2 were also used to fabricate near infrared reflector on GaAs substrates. The reflector consisted of 6 SiO2/TiO2 bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of ≤2% in the wavelength range between 950 and 1100 nm has been obtained in the present multiplayer SiO2/TiO2 coating.

AB - A single layer sol-gel derived TiO2 thin films and 6 periods SiO2/TiO2 multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-infrared-reflective coating for high power semiconductor laser applications. Crack free TiO2 thin films having thickness of 80-150 nm, and refractive indices of 1.8-2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO2 thin films on GaAs substrates have shown reflectance of ≤ 1% in the wavelength of about 808 nm. Thin films of TiO2 and SiO2 were also used to fabricate near infrared reflector on GaAs substrates. The reflector consisted of 6 SiO2/TiO2 bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of ≤2% in the wavelength range between 950 and 1100 nm has been obtained in the present multiplayer SiO2/TiO2 coating.

KW - Anti-reflective coating

KW - Near-infrared-reflective coating

KW - Semiconductor

KW - Semiconductor laser

KW - Sol-gel

UR - https://www.scopus.com/pages/publications/0035772771

U2 - 10.1117/12.446543

DO - 10.1117/12.446543

M3 - 文章

AN - SCOPUS:0035772771

SN - 0277-786X

VL - 4594

SP - 168

EP - 172

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Fabrication and optical properties of sol-gel derived interference coating for high power laser applications

Abstract

Keywords

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