Fabrication and characteristics of BaTi0.85Sn 0.15O3 thin films on tin doped indium oxide/glass substrate

Guisheng Zhu; Huarui Xu; Zupei Yang; Aibing Yu

doi:10.1016/j.tsf.2013.01.068

Fabrication and characteristics of BaTi_0.85Sn _0.15O₃ thin films on tin doped indium oxide/glass substrate

Guisheng Zhu
, Huarui Xu
, Zupei Yang
, Aibing Yu

School of Energy and Power Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This paper reports the correlation between the microstructure and the physical properties of transparent BaTi_0.85Sn_0.15O ₃ (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	Thin Solid Films
Volume	531
DOIs	https://doi.org/10.1016/j.tsf.2013.01.068
State	Published - 2013

Keywords

BaTiSnO thin film
Dielectric tunability
Inter-diffusion
Optical transparency
Sputtering

Access to Document

10.1016/j.tsf.2013.01.068

Cite this

@article{6146b6997ab342e5b2f76902c124e905,

title = "Fabrication and characteristics of BaTi0.85Sn 0.15O3 thin films on tin doped indium oxide/glass substrate",

abstract = "This paper reports the correlation between the microstructure and the physical properties of transparent BaTi0.85Sn0.15O 3 (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75\% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.",

keywords = "BaTiSnO thin film, Dielectric tunability, Inter-diffusion, Optical transparency, Sputtering",

author = "Guisheng Zhu and Huarui Xu and Zupei Yang and Aibing Yu",

year = "2013",

doi = "10.1016/j.tsf.2013.01.068",

language = "英语",

volume = "531",

pages = "415--418",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and characteristics of BaTi0.85Sn 0.15O3 thin films on tin doped indium oxide/glass substrate

AU - Zhu, Guisheng

AU - Xu, Huarui

AU - Yang, Zupei

AU - Yu, Aibing

PY - 2013

Y1 - 2013

N2 - This paper reports the correlation between the microstructure and the physical properties of transparent BaTi0.85Sn0.15O 3 (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.

AB - This paper reports the correlation between the microstructure and the physical properties of transparent BaTi0.85Sn0.15O 3 (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.

KW - BaTiSnO thin film

KW - Dielectric tunability

KW - Inter-diffusion

KW - Optical transparency

KW - Sputtering

UR - https://www.scopus.com/pages/publications/84875456917

U2 - 10.1016/j.tsf.2013.01.068

DO - 10.1016/j.tsf.2013.01.068

M3 - 文章

AN - SCOPUS:84875456917

SN - 0040-6090

VL - 531

SP - 415

EP - 418

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Fabrication and characteristics of BaTi_0.85Sn _0.15O₃ thin films on tin doped indium oxide/glass substrate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this