Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth

Qiang Li; Feng Yun; Yufeng Li; Wen Ding; Ye Zhang

doi:10.1038/s41598-017-01385-0

Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth

Qiang Li
, Feng Yun
, Yufeng Li
, Wen Ding
, Ye Zhang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (∼300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ∼200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ∼30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.

Original language	English
Article number	1600
Journal	Scientific Reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-01385-0
State	Published - 1 Dec 2017

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@article{14d00af476ca402ea77e8d95477dbaf5,

title = "Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth",

abstract = "The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (∼300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90\% after 400 nm and the sheet resistance is ∼200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ∼30\%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.",

author = "Qiang Li and Feng Yun and Yufeng Li and Wen Ding and Ye Zhang",

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doi = "10.1038/s41598-017-01385-0",

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T1 - Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth

AU - Li, Qiang

AU - Yun, Feng

AU - Li, Yufeng

AU - Ding, Wen

AU - Zhang, Ye

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (∼300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ∼200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ∼30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.

AB - The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (∼300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ∼200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ∼30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.

UR - https://www.scopus.com/pages/publications/85019181314

U2 - 10.1038/s41598-017-01385-0

DO - 10.1038/s41598-017-01385-0

M3 - 文章

C2 - 28487528

AN - SCOPUS:85019181314

SN - 2045-2322

VL - 7

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 1600

ER -

Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth

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