Abstract
Molecular dynamics simulations are performed to clarify the extreme strain rate and temperature dependence of the mechanical behaviors of nano silicon nitride thin layers in a basal plane under tension. It is found that fracture stresses show almost no change with increasing strain rate. However, fracture strains decrease gradually due to the appearance of additional N2c-Si bond breaking defects in the deformation process. With increasing loading temperature, there is a noticeable drop in fracture stress and fracture strain. In the low temperature range, roughness phases can be observed owing to a combination of factors such as configuration evolution and energy change. This journal is
| Original language | English |
|---|---|
| Pages (from-to) | 15551-15557 |
| Number of pages | 7 |
| Journal | Physical Chemistry Chemical Physics |
| Volume | 16 |
| Issue number | 29 |
| DOIs | |
| State | Published - 7 Aug 2014 |
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