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Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: A molecular dynamics study

  • Xuefeng Lu
  • , Hongjie Wang
  • , Yin Wei
  • , Jiangbo Wen
  • , Min Niu
  • , Shuhai Jia
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Molecular dynamics simulations are performed to clarify the extreme strain rate and temperature dependence of the mechanical behaviors of nano silicon nitride thin layers in a basal plane under tension. It is found that fracture stresses show almost no change with increasing strain rate. However, fracture strains decrease gradually due to the appearance of additional N2c-Si bond breaking defects in the deformation process. With increasing loading temperature, there is a noticeable drop in fracture stress and fracture strain. In the low temperature range, roughness phases can be observed owing to a combination of factors such as configuration evolution and energy change. This journal is

Original languageEnglish
Pages (from-to)15551-15557
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume16
Issue number29
DOIs
StatePublished - 7 Aug 2014

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