Skip to main navigation Skip to search Skip to main content

Experimental Validations of the SiC MOSFET based LLC Converter Circuit and Power Loss Models

  • University of Arkansas, Fayetteville

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

LLC converters are the most popular isolated dc/dc converter with high efficiency power conversion and simple control strategy. To facilitate the design and optimization of LLC converters, in this article, we investigate the circuit and power loss models. The high accuracy of the circuit and power loss models are ensured by adopting time domain modelling. The power loss model is developed solely based on the manufacture provided datasheets with convenient yet effective evaluation of components performances. A simulation and design tool is built to further facilitate the evaluation of the LLC converters. Experimental results from a 500 W symmetric half-bridge LLC converter are presented and compared with the theoretical analysis results to validate the accuracy and effectiveness of the developed models.

Original languageEnglish
Title of host publication2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages322-327
Number of pages6
ISBN (Electronic)9781665401814
DOIs
StatePublished - 2021
Externally publishedYes
Event8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Virtual, Online, United States
Duration: 7 Nov 202111 Nov 2021

Publication series

Name2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings

Conference

Conference8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021
Country/TerritoryUnited States
CityVirtual, Online
Period7/11/2111/11/21

Keywords

  • LLC converter
  • Power loss model
  • SiC MOSFET

Fingerprint

Dive into the research topics of 'Experimental Validations of the SiC MOSFET based LLC Converter Circuit and Power Loss Models'. Together they form a unique fingerprint.

Cite this