Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

Mayameen S. Kadhim; Feng Yang; Bai Sun; Wentao Hou; Haixia Peng; Yunming Hou; Yongfang Jia; Ling Yuan; Yanmei Yu; Yong Zhao

doi:10.1021/acsaelm.8b00070

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Mayameen S. Kadhim
, Feng Yang
, Bai Sun
, Wentao Hou
, Haixia Peng
, Yunming Hou
, Yongfang Jia
, Ling Yuan
, Yanmei Yu
, Yong Zhao

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS2/ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS2/ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.

Original language	English
Pages (from-to)	318-324
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	1
Issue number	3
DOIs	https://doi.org/10.1021/acsaelm.8b00070
State	Published - 26 Mar 2019
Externally published	Yes

Keywords

heterojunction
memory device
negative differential resistance
resistive switching
self-colored

Access to Document

10.1021/acsaelm.8b00070

Cite this

@article{8f3a356d3145496e8a86d78a1d8514e0,

title = "Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices",

abstract = "A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS2/ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS2/ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.",

keywords = "heterojunction, memory device, negative differential resistance, resistive switching, self-colored",

author = "Kadhim, \{Mayameen S.\} and Feng Yang and Bai Sun and Wentao Hou and Haixia Peng and Yunming Hou and Yongfang Jia and Ling Yuan and Yanmei Yu and Yong Zhao",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = mar,

day = "26",

doi = "10.1021/acsaelm.8b00070",

language = "英语",

volume = "1",

pages = "318--324",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

AU - Kadhim, Mayameen S.

AU - Yang, Feng

AU - Sun, Bai

AU - Hou, Wentao

AU - Peng, Haixia

AU - Hou, Yunming

AU - Jia, Yongfang

AU - Yuan, Ling

AU - Yu, Yanmei

AU - Zhao, Yong

PY - 2019/3/26

Y1 - 2019/3/26

N2 - A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS2/ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS2/ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.

AB - A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS2/ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS2/ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.

KW - heterojunction

KW - memory device

KW - negative differential resistance

KW - resistive switching

KW - self-colored

UR - https://www.scopus.com/pages/publications/85067627995

U2 - 10.1021/acsaelm.8b00070

DO - 10.1021/acsaelm.8b00070

M3 - 文章

AN - SCOPUS:85067627995

SN - 2637-6113

VL - 1

SP - 318

EP - 324

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 3

ER -

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this