Abstract
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (X) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
| Original language | English |
|---|---|
| Pages (from-to) | 542-545 |
| Number of pages | 4 |
| Journal | Science |
| Volume | 369 |
| Issue number | 6503 |
| DOIs | |
| State | Published - 31 Jul 2020 |
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