Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

  • Tian Ran Wei
  • , Min Jin
  • , Yuecun Wang
  • , Hongyi Chen
  • , Zhiqiang Gao
  • , Kunpeng Zhao
  • , Pengfei Qiu
  • , Zhiwei Shan
  • , Jun Jiang
  • , Rongbin Li
  • , Lidong Chen
  • , Jian He
  • , Xun Shi

Research output: Contribution to journalArticlepeer-review

287 Scopus citations

Abstract

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (X) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

Original languageEnglish
Pages (from-to)542-545
Number of pages4
JournalScience
Volume369
Issue number6503
DOIs
StatePublished - 31 Jul 2020

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