TY - GEN
T1 - Evaluation of Frequency-Dependent On-Resistance of GaN Devices at High Frequency
AU - Wang, Kangping
AU - Li, Bingyang
AU - Qi, Zhiyuan
AU - Wang, Laili
AU - Yang, Xu
AU - Qiu, Aici
N1 - Publisher Copyright:
© 2019 The Korean Institute of Power Electronics (KIPE).
PY - 2019/5
Y1 - 2019/5
N2 - The switching frequency of GaN-based power converters has been pushed to several MHz and even higher. At such high frequencies, this paper finds that the on-resistance of GaN devices may be much higher than their DC values, especially for the devices with low on-resistance. The frequency-dependent characteristics of on-resistance are studied through electrical and thermal experiments for the first time in this paper. A simplified finite-element-simulation model is proposed to illustrate the mechanism of the frequency-dependent characteristics. The results show that the frequency-dependent characteristics of the on-resistance are closely related to the current distribution inside the GaN device and affected by the layout. In addition, two same GaN-based 10MHz DC-DC converters were designed to operate under the same conditions, and the only difference comes from the layout of GaN devices. The experimental results show that the efficiency of the converter with optimized layout is improved by 2% compared to that with conventional layout.
AB - The switching frequency of GaN-based power converters has been pushed to several MHz and even higher. At such high frequencies, this paper finds that the on-resistance of GaN devices may be much higher than their DC values, especially for the devices with low on-resistance. The frequency-dependent characteristics of on-resistance are studied through electrical and thermal experiments for the first time in this paper. A simplified finite-element-simulation model is proposed to illustrate the mechanism of the frequency-dependent characteristics. The results show that the frequency-dependent characteristics of the on-resistance are closely related to the current distribution inside the GaN device and affected by the layout. In addition, two same GaN-based 10MHz DC-DC converters were designed to operate under the same conditions, and the only difference comes from the layout of GaN devices. The experimental results show that the efficiency of the converter with optimized layout is improved by 2% compared to that with conventional layout.
KW - Frequency-dependent characteristics
KW - Gallium nitride (GaN)
KW - High-frequency power converter
KW - On-resistance
UR - https://www.scopus.com/pages/publications/85071622718
M3 - 会议稿件
AN - SCOPUS:85071622718
T3 - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
SP - 2153
EP - 2157
BT - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia
Y2 - 27 May 2019 through 30 May 2019
ER -