Erratum: Application of Zr-Si film as diffusion barrier in Cu metallization (Electrochemical and Solid-State Letters (2007) 10 (H299))

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	S11
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1149/1.3139732
State	Published - 2009

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@article{9c1d78d876244eafbffb0b2a341bc7c9,

title = "Erratum: Application of Zr-Si film as diffusion barrier in Cu metallization (Electrochemical and Solid-State Letters (2007) 10 (H299))",

author = "Ying Wang and Fei Cao and Zhongxiao Song and Zhao, \{Chun Hui\}",

year = "2009",

doi = "10.1149/1.3139732",

language = "英语",

volume = "12",

pages = "S11",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "8",

}

TY - JOUR

T1 - Erratum

T2 - Application of Zr-Si film as diffusion barrier in Cu metallization (Electrochemical and Solid-State Letters (2007) 10 (H299))

AU - Wang, Ying

AU - Cao, Fei

AU - Song, Zhongxiao

AU - Zhao, Chun Hui

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/67649232802

U2 - 10.1149/1.3139732

DO - 10.1149/1.3139732

M3 - 评论/辩论

AN - SCOPUS:67649232802

SN - 1099-0062

VL - 12

SP - S11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

ER -