Abstract
Oxides form a class of material, which covers almost all the spectra of functionalities: dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric, ferroelectric, ferromagnetic, etc. In this chapter, the integration of epitaxial crystalline oxides on the workhorse of the semiconductor industry, the silicon, by molecular beam epitaxy (MBE) is introduced. This chapter reviews the key factors for the epitaxy of oxide crystal on semiconductor as well as the nucleation and growth of semiconductor on oxide substrate. A state of the art for epitaxial systems combining oxides and semiconductors is then given. Finally, a comparison between different complex oxide growth techniques and a description of devices for nanoelectronics combining semiconductors and oxides are presented.
| Original language | English |
|---|---|
| Title of host publication | Molecular Beam Epitaxy |
| Subtitle of host publication | from Research to Mass Production |
| Publisher | Elsevier |
| Pages | 377-402 |
| Number of pages | 26 |
| ISBN (Electronic) | 9780128121368 |
| ISBN (Print) | 9780128121375 |
| DOIs | |
| State | Published - 1 Jan 2018 |
Keywords
- bixbyite
- Complex oxide
- epitaxy
- ferroelectrics
- high-k
- integration
- optoelectronics
- perovskite
- PLD
- semiconductor
- silicon, MBE, MOCVD
- sputtering