Epitaxial Systems Combining Oxides and Semiconductors

  • Gang Niu
  • , Guillaume Saint-Girons
  • , Bertrand Vilquin

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

11 Scopus citations

Abstract

Oxides form a class of material, which covers almost all the spectra of functionalities: dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric, ferroelectric, ferromagnetic, etc. In this chapter, the integration of epitaxial crystalline oxides on the workhorse of the semiconductor industry, the silicon, by molecular beam epitaxy (MBE) is introduced. This chapter reviews the key factors for the epitaxy of oxide crystal on semiconductor as well as the nucleation and growth of semiconductor on oxide substrate. A state of the art for epitaxial systems combining oxides and semiconductors is then given. Finally, a comparison between different complex oxide growth techniques and a description of devices for nanoelectronics combining semiconductors and oxides are presented.

Original languageEnglish
Title of host publicationMolecular Beam Epitaxy
Subtitle of host publicationfrom Research to Mass Production
PublisherElsevier
Pages377-402
Number of pages26
ISBN (Electronic)9780128121368
ISBN (Print)9780128121375
DOIs
StatePublished - 1 Jan 2018

Keywords

  • bixbyite
  • Complex oxide
  • epitaxy
  • ferroelectrics
  • high-k
  • integration
  • optoelectronics
  • perovskite
  • PLD
  • semiconductor
  • silicon, MBE, MOCVD
  • sputtering

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