Epitaxial growth and capacitance-voltage characteristics of BiFeO 3/CeO 2/yttria-stabilized zirconia/Si(001) heterostructure

Zhongqiang Hu; Meiya Li; Yongdan Zhu; Shizhou Pu; Xiaolian Liu; Bobby Sebo; Xingzhong Zhao; Shuxiang Dong

doi:10.1063/1.4730621

Epitaxial growth and capacitance-voltage characteristics of BiFeO ₃/CeO ₂/yttria-stabilized zirconia/Si(001) heterostructure

Zhongqiang Hu
, Meiya Li
, Yongdan Zhu
, Shizhou Pu
, Xiaolian Liu
, Bobby Sebo
, Xingzhong Zhao
, Shuxiang Dong

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report the epitaxial growth of multiferroic BiFeO ₃ (BFO) film on Si(001) substrate by pulsed laser deposition using CeO ₂/yttria- stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO ₂(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO∥[100]CeO ₂∥[100]YSZ∥[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO ₂/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5 V at sweeping voltages of ±16 V. Both the high and low capacitance values showed no obvious degradation after 10 ⁴ s. The improved retention property was attributed to the use of high-k CeO ₂/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure.

Original language	English
Article number	252908
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4730621
State	Published - 18 Jun 2012
Externally published	Yes

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10.1063/1.4730621

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@article{2ba21408dacc42259fbcaee09cf1cedb,

title = "Epitaxial growth and capacitance-voltage characteristics of BiFeO 3/CeO 2/yttria-stabilized zirconia/Si(001) heterostructure",

abstract = "We report the epitaxial growth of multiferroic BiFeO 3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO 2/yttria- stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO 2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO∥[100]CeO 2∥[100]YSZ∥[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO 2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5 V at sweeping voltages of ±16 V. Both the high and low capacitance values showed no obvious degradation after 10 4 s. The improved retention property was attributed to the use of high-k CeO 2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure.",

author = "Zhongqiang Hu and Meiya Li and Yongdan Zhu and Shizhou Pu and Xiaolian Liu and Bobby Sebo and Xingzhong Zhao and Shuxiang Dong",

year = "2012",

month = jun,

day = "18",

doi = "10.1063/1.4730621",

language = "英语",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Epitaxial growth and capacitance-voltage characteristics of BiFeO 3/CeO 2/yttria-stabilized zirconia/Si(001) heterostructure

AU - Hu, Zhongqiang

AU - Li, Meiya

AU - Zhu, Yongdan

AU - Pu, Shizhou

AU - Liu, Xiaolian

AU - Sebo, Bobby

AU - Zhao, Xingzhong

AU - Dong, Shuxiang

PY - 2012/6/18

Y1 - 2012/6/18

N2 - We report the epitaxial growth of multiferroic BiFeO 3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO 2/yttria- stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO 2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO∥[100]CeO 2∥[100]YSZ∥[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO 2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5 V at sweeping voltages of ±16 V. Both the high and low capacitance values showed no obvious degradation after 10 4 s. The improved retention property was attributed to the use of high-k CeO 2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure.

AB - We report the epitaxial growth of multiferroic BiFeO 3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO 2/yttria- stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO 2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO∥[100]CeO 2∥[100]YSZ∥[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO 2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5 V at sweeping voltages of ±16 V. Both the high and low capacitance values showed no obvious degradation after 10 4 s. The improved retention property was attributed to the use of high-k CeO 2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure.

UR - https://www.scopus.com/pages/publications/84863332113

U2 - 10.1063/1.4730621

DO - 10.1063/1.4730621

M3 - 文章

AN - SCOPUS:84863332113

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252908

ER -

Epitaxial growth and capacitance-voltage characteristics of BiFeO ₃/CeO ₂/yttria-stabilized zirconia/Si(001) heterostructure

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