Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. De Coux; R. Bachelet; B. Warot-Fonrose; V. Skumryev; L. Lupina; G. Niu; T. Schroeder; J. Fontcuberta; F. Sánchez

doi:10.1063/1.4887349

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. De Coux
, R. Bachelet
, B. Warot-Fonrose
, V. Skumryev
, L. Lupina
, G. Niu
, T. Schroeder
, J. Fontcuberta
, F. Sánchez

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe₂O₄ films can be grown epitaxially on Si(111) using a Y₂O₃ buffer layer, and remarkably the Y₂O₃/Si(111) interface is stable and remains atomically sharp. CoFe₂O₄ films present high crystal quality and high saturation magnetization.

Original language	English
Article number	012401
Journal	Applied Physics Letters
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.4887349
State	Published - 7 Jul 2014
Externally published	Yes

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10.1063/1.4887349

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title = "Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces",

abstract = "A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.",

author = "\{De Coux\}, P. and R. Bachelet and B. Warot-Fonrose and V. Skumryev and L. Lupina and G. Niu and T. Schroeder and J. Fontcuberta and F. S{\'a}nchez",

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AU - De Coux, P.

AU - Bachelet, R.

AU - Warot-Fonrose, B.

AU - Skumryev, V.

AU - Lupina, L.

AU - Niu, G.

AU - Schroeder, T.

AU - Fontcuberta, J.

AU - Sánchez, F.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.

AB - A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.

UR - https://www.scopus.com/pages/publications/84908519188

U2 - 10.1063/1.4887349

DO - 10.1063/1.4887349

M3 - 文章

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SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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ER -

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

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