Environment friendly MEMS fabrication: Proposal of new D-RIE process gases for reduction of green house effect

  • Shuji Naeano
  • , Toshinori Shibata
  • , Kaoru Sakoda
  • , Minoru Inoue
  • , Satoshi Hasaka
  • , Takayuki Takano
  • , Tsuyoshi Ikehara
  • , Ryutaro Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Environmental emission volume of green house gases such as SF6 and QF8, consumed for Si deep etching process in MEMS fabrication, are increasing followed by the MEMS market growth. To reduce the emitted green house gases, alternative C3F6 and IF5 were investigated to be applied for MEMS etching process instead of conventional Bosch process gases. The C3F6 and IF5 gases have very small global warming potential, so that they were useful to reduce over 95% of the green house gases maintaining the good etching performance on both etching rate and etching profile. The reduction of warming gas emission by the new gases is estimated that approximately 43 trees might be conserved during one etching process of a wafer to 300 μm. In addition to this merit, IF 5 is found to be applied for anisotropic trench etching without Bosch process.

Original languageEnglish
Title of host publicationProceedings - CIS Workshops 2007, 2007 International Conference on Computational Intelligence and Security Workshops, CISW 2007
Pages341-344
Number of pages4
StatePublished - 2007
Externally publishedYes
Event20th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2007 - Kobe, Japan
Duration: 21 Jan 200725 Jan 2007

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Conference

Conference20th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2007
Country/TerritoryJapan
CityKobe
Period21/01/0725/01/07

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