Enhancing photocurrent in unannealed NiS x/CdS photoelectrochemical system for water splitting and hydrogen production

Ning Zhang; Liejin Guo

doi:10.1557/opl.2011.1196

Enhancing photocurrent in unannealed NiS _x/CdS photoelectrochemical system for water splitting and hydrogen production

Ning Zhang
, Liejin Guo

School of Energy and Power Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, NiS _x was deposited on FTO by chemical bath and worked as the inner layer in order to enhance the photocurrent of CdS film. It is found the unannealed CdS/NiS _x had a higher photocurrent than unannealed CdS, but after annealing, the photocurrent of CdS/NiS _x showed dramatical decrease. The mechanism was discussed in detail by UPS and current-potential curves.

Original language	English
Title of host publication	Renewable Fuels and Nanotechnology
Pages	120-125
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1196
State	Published - 2011
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1326
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1557/opl.2011.1196

Cite this

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title = "Enhancing photocurrent in unannealed NiS x/CdS photoelectrochemical system for water splitting and hydrogen production",

abstract = "In this work, NiS x was deposited on FTO by chemical bath and worked as the inner layer in order to enhance the photocurrent of CdS film. It is found the unannealed CdS/NiS x had a higher photocurrent than unannealed CdS, but after annealing, the photocurrent of CdS/NiS x showed dramatical decrease. The mechanism was discussed in detail by UPS and current-potential curves.",

author = "Ning Zhang and Liejin Guo",

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language = "英语",

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AU - Guo, Liejin

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AB - In this work, NiS x was deposited on FTO by chemical bath and worked as the inner layer in order to enhance the photocurrent of CdS film. It is found the unannealed CdS/NiS x had a higher photocurrent than unannealed CdS, but after annealing, the photocurrent of CdS/NiS x showed dramatical decrease. The mechanism was discussed in detail by UPS and current-potential curves.

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