Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

Xin An Zhang; Jing Wen Zhang; Wei Feng Zhang; Dong Wang; Zhen Bi; Xu Ming Bian; Xun Hou

doi:10.1016/j.tsf.2007.09.034

Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

Xin An Zhang
, Jing Wen Zhang
, Wei Feng Zhang
, Dong Wang
, Zhen Bi
, Xu Ming Bian
, Xun Hou

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Henan University
CAS - Xi'an Institute of Optics and Precision Mechanics

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10⁴. The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm² V^{- 1} s^{- 1} has been determined.

Original language	English
Pages (from-to)	3305-3308
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2007.09.034
State	Published - 31 Mar 2008

Keywords

Doping
L-MBE
Thin film transistor
Zinc oxide

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10.1016/j.tsf.2007.09.034

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title = "Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy",

abstract = "The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 104. The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm2 V- 1 s- 1 has been determined.",

keywords = "Doping, L-MBE, Thin film transistor, Zinc oxide",

author = "Zhang, \{Xin An\} and Zhang, \{Jing Wen\} and Zhang, \{Wei Feng\} and Dong Wang and Zhen Bi and Bian, \{Xu Ming\} and Xun Hou",

year = "2008",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2007.09.034",

language = "英语",

volume = "516",

pages = "3305--3308",

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TY - JOUR

T1 - Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

AU - Zhang, Xin An

AU - Zhang, Jing Wen

AU - Zhang, Wei Feng

AU - Wang, Dong

AU - Bi, Zhen

AU - Bian, Xu Ming

AU - Hou, Xun

PY - 2008/3/31

Y1 - 2008/3/31

N2 - The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 104. The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm2 V- 1 s- 1 has been determined.

AB - The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 104. The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm2 V- 1 s- 1 has been determined.

KW - Doping

KW - L-MBE

KW - Thin film transistor

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/39649124244

U2 - 10.1016/j.tsf.2007.09.034

DO - 10.1016/j.tsf.2007.09.034

M3 - 文章

AN - SCOPUS:39649124244

SN - 0040-6090

VL - 516

SP - 3305

EP - 3308

JO - Thin Solid Films

JF - Thin Solid Films

IS - 10

ER -

Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

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Keywords

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