Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO2/Si substrate

Xin'an Zhang; Jingwen Zhang; Dong Wang; Zhen Bi; Xuming Bian; Weifeng Zhang; Xun Hou

Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO₂/Si substrate

Xin'an Zhang
, Jingwen Zhang
, Dong Wang
, Zhen Bi
, Xuming Bian
, Weifeng Zhang
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Nitrogen-doped ZnO film is deposited on SiO₂/p-Si substrate by L-MBE in the mixed gas of NH₃ and O₂. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO (0002) plane is only 1.89°. Then, a bottom-gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO₂ severed as insulator is fabricated. Electrical measurement shows the device operates in enhancement mode and exhibits an on/off ratio of 10⁴. The threshold voltage is 5.15 V and the channel mobility on the order of 2.66 cm²/(V·s) is determined.

Original language	English
Pages (from-to)	306-308
Number of pages	3
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	28
Issue number	SUPPL.
State	Published - Sep 2007

Keywords

Channel mobility
L-MBE
Thin film transistor
ZnO thin film

Cite this

@article{9953dbcfed994fac8b33c95447dec2ea,

title = "Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO2/Si substrate",

abstract = "Nitrogen-doped ZnO film is deposited on SiO2/p-Si substrate by L-MBE in the mixed gas of NH3 and O2. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO (0002) plane is only 1.89°. Then, a bottom-gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator is fabricated. Electrical measurement shows the device operates in enhancement mode and exhibits an on/off ratio of 104. The threshold voltage is 5.15 V and the channel mobility on the order of 2.66 cm2/(V·s) is determined.",

keywords = "Channel mobility, L-MBE, Thin film transistor, ZnO thin film",

author = "Xin'an Zhang and Jingwen Zhang and Dong Wang and Zhen Bi and Xuming Bian and Weifeng Zhang and Xun Hou",

year = "2007",

month = sep,

language = "英语",

volume = "28",

pages = "306--308",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "SUPPL.",

}

TY - JOUR

T1 - Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO2/Si substrate

AU - Zhang, Xin'an

AU - Zhang, Jingwen

AU - Wang, Dong

AU - Bi, Zhen

AU - Bian, Xuming

AU - Zhang, Weifeng

AU - Hou, Xun

PY - 2007/9

Y1 - 2007/9

N2 - Nitrogen-doped ZnO film is deposited on SiO2/p-Si substrate by L-MBE in the mixed gas of NH3 and O2. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO (0002) plane is only 1.89°. Then, a bottom-gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator is fabricated. Electrical measurement shows the device operates in enhancement mode and exhibits an on/off ratio of 104. The threshold voltage is 5.15 V and the channel mobility on the order of 2.66 cm2/(V·s) is determined.

AB - Nitrogen-doped ZnO film is deposited on SiO2/p-Si substrate by L-MBE in the mixed gas of NH3 and O2. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO (0002) plane is only 1.89°. Then, a bottom-gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator is fabricated. Electrical measurement shows the device operates in enhancement mode and exhibits an on/off ratio of 104. The threshold voltage is 5.15 V and the channel mobility on the order of 2.66 cm2/(V·s) is determined.

KW - Channel mobility

KW - L-MBE

KW - Thin film transistor

KW - ZnO thin film

UR - https://www.scopus.com/pages/publications/37349039317

M3 - 文章

AN - SCOPUS:37349039317

SN - 0253-4177

VL - 28

SP - 306

EP - 308

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - SUPPL.

ER -

Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO₂/Si substrate

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Keywords

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