Enhanced tunable dielectric properties of Ba0.5Sr 0.5TiO3/Bi1.5Zn1.0Nb 1.5O7 multilayer thin films by a sol-gel process

Xin Yan; Wei Ren; Peng Shi; Xiaoqing Wu; Xi Yao

doi:10.1016/j.tsf.2011.04.118

Enhanced tunable dielectric properties of Ba_0.5Sr _0.5TiO₃/Bi_1.5Zn_1.0Nb _1.5O₇ multilayer thin films by a sol-gel process

Xin Yan
, Wei Ren
, Peng Shi
, Xiaoqing Wu
, Xi Yao

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Ba_0.5Sr_0.5TiO₃(BST)/Bi _1.5Zn_1.0Nb_1.5O₇(BZN) multilayer thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 °C and 750 °C. The surface of the multilayer thin films annealed at 750 °C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 °C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12% measured with dc bias field of 580 kV/cm at 10 kHz.

Original language	English
Pages (from-to)	789-792
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2011.04.118
State	Published - 1 Nov 2011

Keywords

Dielectric materials
Multilayer thin films
Rapid thermal annealing
Sol-gel process
Tunable dielectric properties

Access to Document

10.1016/j.tsf.2011.04.118

Cite this

@article{dcad7fc982aa4e9f8dbcb4b76da4728e,

title = "Enhanced tunable dielectric properties of Ba0.5Sr 0.5TiO3/Bi1.5Zn1.0Nb 1.5O7 multilayer thin films by a sol-gel process",

abstract = "Ba0.5Sr0.5TiO3(BST)/Bi 1.5Zn1.0Nb1.5O7(BZN) multilayer thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 °C and 750 °C. The surface of the multilayer thin films annealed at 750 °C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 °C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12\% measured with dc bias field of 580 kV/cm at 10 kHz.",

keywords = "Dielectric materials, Multilayer thin films, Rapid thermal annealing, Sol-gel process, Tunable dielectric properties",

author = "Xin Yan and Wei Ren and Peng Shi and Xiaoqing Wu and Xi Yao",

year = "2011",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2011.04.118",

language = "英语",

volume = "520",

pages = "789--792",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Enhanced tunable dielectric properties of Ba0.5Sr 0.5TiO3/Bi1.5Zn1.0Nb 1.5O7 multilayer thin films by a sol-gel process

AU - Yan, Xin

AU - Ren, Wei

AU - Shi, Peng

AU - Wu, Xiaoqing

AU - Yao, Xi

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Ba0.5Sr0.5TiO3(BST)/Bi 1.5Zn1.0Nb1.5O7(BZN) multilayer thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 °C and 750 °C. The surface of the multilayer thin films annealed at 750 °C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 °C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12% measured with dc bias field of 580 kV/cm at 10 kHz.

AB - Ba0.5Sr0.5TiO3(BST)/Bi 1.5Zn1.0Nb1.5O7(BZN) multilayer thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 °C and 750 °C. The surface of the multilayer thin films annealed at 750 °C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 °C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12% measured with dc bias field of 580 kV/cm at 10 kHz.

KW - Dielectric materials

KW - Multilayer thin films

KW - Rapid thermal annealing

KW - Sol-gel process

KW - Tunable dielectric properties

UR - https://www.scopus.com/pages/publications/80755138406

U2 - 10.1016/j.tsf.2011.04.118

DO - 10.1016/j.tsf.2011.04.118

M3 - 文章

AN - SCOPUS:80755138406

SN - 0040-6090

VL - 520

SP - 789

EP - 792

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Enhanced tunable dielectric properties of Ba_0.5Sr _0.5TiO₃/Bi_1.5Zn_1.0Nb _1.5O₇ multilayer thin films by a sol-gel process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this