Enhanced resistive switching effect upon illumination in self-assembled NiWO₄ nano-nests

The resistive switching effect of devices with metal-oxide–metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO₄ nano-nests on a Ti substrate were synthesized by a hydrothermal process. Moreover, a resistive switching memory device with Ag/NiWO₄/Ti structure is demonstrated. The device shows an enhanced bipolar resistive switching effect under white-light illumination. This study is useful for exploring multifunctional materials and their applications in light-controlled nonvolatile memory devices.