Enhanced photoresponse and stability in graphene/silicon Schottky photodetectors modified with perovskite nanoparticles

Graphene/silicon Schottky junction has been exhibited for significant photodetection; however, it still has relatively low detectivity due to high dark current. To cope with the issue, CuGeO₃ perovskite nanoparticles were analyzed by density functional theory and synthesized using a scalable and cost-effective autoclave method for the Graphene/silicon Schottky junction photodetector. Subsequently, a CuGeO₃/Graphene/Silicon Schottky photodetector was fabricated, and its high-performance characteristics were systematically examined. The photodetector demonstrated an exceptional detectivity of 1.196 × 10¹³ Jones, maximum responsivity of 0.496 A/W, and a significant photocurrent of 3.4 mA at 405 nm wavelength at 3 reverse bias operating voltages. The device exhibited a remarkably low dark current of 1.379 × 10⁻⁸ A, suppressing dark current significantly as compared to conventional Gr/Si Schottky photodetectors. In addition, the photodetector showcased a stable response at 300 continuous working cycles, a fast rise time of 0.11 ms, and an I_ON/OFF ratio up to ∼10⁵, demonstrating superior switching performance. Moreover, the highest external quantum efficiency achieved was 151.9 %, highlighting the excellent photon-to-electron conversion efficiency. These findings emphasize the potential of CuGeO₃ perovskite nanoparticles for high performance and future advancements in optoelectronic devices.