Enhanced photocurrent gain by CdTe quantum dot modified ZnO nanowire

Lei Li; Shuming Yang; Weixuan Jing; Zhuangde Jiang; Feng Han

doi:10.1016/j.sna.2015.06.020

Enhanced photocurrent gain by CdTe quantum dot modified ZnO nanowire

Lei Li
, Shuming Yang
, Weixuan Jing
, Zhuangde Jiang
, Feng Han

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Abstract In this paper, a zinc oxide (ZnO) nanowire (NW) photodetector was fabricated using dielectrophoresis technique. The ZnO NW was synthesized by chemical vapor deposition (CVD) method, and characterized by SEM, XRD and photoluminescence (PL) spectrum. The photodetector showed obvious photoresponse to 365 nm UV light. By decorating the ZnO NWs with CdTe quantum dots (QDs), the photocurrent (PC) gain was enhanced from 199 to 2896, when the light intensity was 5.3 mW/cm². The response spectrum was also extended to the visible light region. The underlying mechanism of the enhancement was assigned to the high-efficiency charge transfer caused by the type-II band structure between ZnO NWs and CdTe QDs. The greatly quenched PL intensity of CdTe QDs/ZnO NWs composites provided further evidence for the high efficiency charge transfer.

Original language	English
Article number	9220
Pages (from-to)	292-298
Number of pages	7
Journal	Sensors and Actuators A: Physical
Volume	232
DOIs	https://doi.org/10.1016/j.sna.2015.06.020
State	Published - 2 Jul 2015

Keywords

CdTe quantum dots
Charge transfer
Photodetector
ZnO nanowire

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10.1016/j.sna.2015.06.020

Cite this

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title = "Enhanced photocurrent gain by CdTe quantum dot modified ZnO nanowire",

abstract = "Abstract In this paper, a zinc oxide (ZnO) nanowire (NW) photodetector was fabricated using dielectrophoresis technique. The ZnO NW was synthesized by chemical vapor deposition (CVD) method, and characterized by SEM, XRD and photoluminescence (PL) spectrum. The photodetector showed obvious photoresponse to 365 nm UV light. By decorating the ZnO NWs with CdTe quantum dots (QDs), the photocurrent (PC) gain was enhanced from 199 to 2896, when the light intensity was 5.3 mW/cm2. The response spectrum was also extended to the visible light region. The underlying mechanism of the enhancement was assigned to the high-efficiency charge transfer caused by the type-II band structure between ZnO NWs and CdTe QDs. The greatly quenched PL intensity of CdTe QDs/ZnO NWs composites provided further evidence for the high efficiency charge transfer.",

keywords = "CdTe quantum dots, Charge transfer, Photodetector, ZnO nanowire",

author = "Lei Li and Shuming Yang and Weixuan Jing and Zhuangde Jiang and Feng Han",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = jul,

day = "2",

doi = "10.1016/j.sna.2015.06.020",

language = "英语",

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TY - JOUR

T1 - Enhanced photocurrent gain by CdTe quantum dot modified ZnO nanowire

AU - Li, Lei

AU - Yang, Shuming

AU - Jing, Weixuan

AU - Jiang, Zhuangde

AU - Han, Feng

PY - 2015/7/2

Y1 - 2015/7/2

N2 - Abstract In this paper, a zinc oxide (ZnO) nanowire (NW) photodetector was fabricated using dielectrophoresis technique. The ZnO NW was synthesized by chemical vapor deposition (CVD) method, and characterized by SEM, XRD and photoluminescence (PL) spectrum. The photodetector showed obvious photoresponse to 365 nm UV light. By decorating the ZnO NWs with CdTe quantum dots (QDs), the photocurrent (PC) gain was enhanced from 199 to 2896, when the light intensity was 5.3 mW/cm2. The response spectrum was also extended to the visible light region. The underlying mechanism of the enhancement was assigned to the high-efficiency charge transfer caused by the type-II band structure between ZnO NWs and CdTe QDs. The greatly quenched PL intensity of CdTe QDs/ZnO NWs composites provided further evidence for the high efficiency charge transfer.

AB - Abstract In this paper, a zinc oxide (ZnO) nanowire (NW) photodetector was fabricated using dielectrophoresis technique. The ZnO NW was synthesized by chemical vapor deposition (CVD) method, and characterized by SEM, XRD and photoluminescence (PL) spectrum. The photodetector showed obvious photoresponse to 365 nm UV light. By decorating the ZnO NWs with CdTe quantum dots (QDs), the photocurrent (PC) gain was enhanced from 199 to 2896, when the light intensity was 5.3 mW/cm2. The response spectrum was also extended to the visible light region. The underlying mechanism of the enhancement was assigned to the high-efficiency charge transfer caused by the type-II band structure between ZnO NWs and CdTe QDs. The greatly quenched PL intensity of CdTe QDs/ZnO NWs composites provided further evidence for the high efficiency charge transfer.

KW - CdTe quantum dots

KW - Charge transfer

KW - Photodetector

KW - ZnO nanowire

UR - https://www.scopus.com/pages/publications/84933509696

U2 - 10.1016/j.sna.2015.06.020

DO - 10.1016/j.sna.2015.06.020

M3 - 文章

AN - SCOPUS:84933509696

SN - 0924-4247

VL - 232

SP - 292

EP - 298

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

M1 - 9220

ER -

Enhanced photocurrent gain by CdTe quantum dot modified ZnO nanowire

Abstract

Keywords

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