Enhanced ferroelectric properties in Mn-doped K0.5Na 0.5NbO3 thin films derived from chemical solution deposition

Lingyan Wang; Wei Ren; Peng Shi; Xiaofeng Chen; Xiaoqing Wu; Xi Yao

doi:10.1063/1.3479530

Enhanced ferroelectric properties in Mn-doped K_0.5Na _0.5NbO₃ thin films derived from chemical solution deposition

Lingyan Wang
, Wei Ren
, Peng Shi
, Xiaofeng Chen
, Xiaoqing Wu
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Mn-doped K_0.5Na_0.5 NbO₃ (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol % manganese acetate was introduced into the polyvinylpyrrolidone-modified KNN precursor solution to prepare the KNN thin films. It was found that Mn doping can increase the dielectric constant and decrease the dielectric loss, as well as significantly decrease the leakage current. The leakage current density of Mn-doped KNN film is about 3× 10^-6 A/cm² at an electric field of 50 kV/cm, which is 10⁴ times lower than that of the undoped film (about 3× 10^-2 A/cm²). These are attributed to the decrease in the concentration in oxygen vacancies and free carrier-holes by increasing the valence of Mn during thermal treatment. As a result, well saturated polarization-electric field hysteresis loops were obtained in the Mn-doped KNN thin films.

Original language	English
Article number	072902
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3479530
State	Published - 16 Aug 2010

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title = "Enhanced ferroelectric properties in Mn-doped K0.5Na 0.5NbO3 thin films derived from chemical solution deposition",

abstract = "Mn-doped K0.5Na0.5 NbO3 (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol \% manganese acetate was introduced into the polyvinylpyrrolidone-modified KNN precursor solution to prepare the KNN thin films. It was found that Mn doping can increase the dielectric constant and decrease the dielectric loss, as well as significantly decrease the leakage current. The leakage current density of Mn-doped KNN film is about 3× 10-6 A/cm2 at an electric field of 50 kV/cm, which is 104 times lower than that of the undoped film (about 3× 10-2 A/cm2). These are attributed to the decrease in the concentration in oxygen vacancies and free carrier-holes by increasing the valence of Mn during thermal treatment. As a result, well saturated polarization-electric field hysteresis loops were obtained in the Mn-doped KNN thin films.",

author = "Lingyan Wang and Wei Ren and Peng Shi and Xiaofeng Chen and Xiaoqing Wu and Xi Yao",

year = "2010",

month = aug,

day = "16",

doi = "10.1063/1.3479530",

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volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Enhanced ferroelectric properties in Mn-doped K0.5Na 0.5NbO3 thin films derived from chemical solution deposition

AU - Wang, Lingyan

AU - Ren, Wei

AU - Shi, Peng

AU - Chen, Xiaofeng

AU - Wu, Xiaoqing

AU - Yao, Xi

PY - 2010/8/16

Y1 - 2010/8/16

N2 - Mn-doped K0.5Na0.5 NbO3 (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol % manganese acetate was introduced into the polyvinylpyrrolidone-modified KNN precursor solution to prepare the KNN thin films. It was found that Mn doping can increase the dielectric constant and decrease the dielectric loss, as well as significantly decrease the leakage current. The leakage current density of Mn-doped KNN film is about 3× 10-6 A/cm2 at an electric field of 50 kV/cm, which is 104 times lower than that of the undoped film (about 3× 10-2 A/cm2). These are attributed to the decrease in the concentration in oxygen vacancies and free carrier-holes by increasing the valence of Mn during thermal treatment. As a result, well saturated polarization-electric field hysteresis loops were obtained in the Mn-doped KNN thin films.

AB - Mn-doped K0.5Na0.5 NbO3 (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol % manganese acetate was introduced into the polyvinylpyrrolidone-modified KNN precursor solution to prepare the KNN thin films. It was found that Mn doping can increase the dielectric constant and decrease the dielectric loss, as well as significantly decrease the leakage current. The leakage current density of Mn-doped KNN film is about 3× 10-6 A/cm2 at an electric field of 50 kV/cm, which is 104 times lower than that of the undoped film (about 3× 10-2 A/cm2). These are attributed to the decrease in the concentration in oxygen vacancies and free carrier-holes by increasing the valence of Mn during thermal treatment. As a result, well saturated polarization-electric field hysteresis loops were obtained in the Mn-doped KNN thin films.

UR - https://www.scopus.com/pages/publications/77956046104

U2 - 10.1063/1.3479530

DO - 10.1063/1.3479530

M3 - 文章

AN - SCOPUS:77956046104

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072902

ER -

Enhanced ferroelectric properties in Mn-doped K_0.5Na _0.5NbO₃ thin films derived from chemical solution deposition

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