Abstract
The development of efficient adsorbents for perfluorinated electronic specialty gases’ (F-gases) recovery presents significant challenges in the chip plasma etching process. In this study, we focus on preparing Ti- and W-replaced MFI zeolites, which offer abundant Lewis acid sites, to enhance the separation of F-gases toward N2. Through single-component gas adsorption and ideal adsorbed solution theory selectivity analyses, the Ti- and W-doped MFI zeolites demonstrate remarkable separation performance. Additionally, dynamic breakthrough experiments have confirmed the effective capture of F-gases using Ti- and W-doped MFI zeolites. The intrinsic adsorption mechanism was also investigated by the Grand Canonical Monte Carlo and independent gradient model (IGM) simulations. IGM results indicate that there is a strong charge transfer interaction between the polar Lewis acid sites in the MFI channel and F-gases with high polarizability. These results highlight the promising potential of MFI zeolites with abundant Lewis acid sites for addressing F-gas capture in the semiconductor industries.
| Original language | English |
|---|---|
| Pages (from-to) | 13388-13396 |
| Number of pages | 9 |
| Journal | Industrial and Engineering Chemistry Research |
| Volume | 64 |
| Issue number | 26 |
| DOIs | |
| State | Published - 2 Jul 2025 |
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