Enhanced electromechanical performance in Ce-doped PZN-PZT ceramics across wide temperature ranges

High-performance piezoelectric ceramics with excellent thermal stability are essential for actuators and sensors functioning in extreme environments, such as aerospace systems and energy exploration platforms. In this study, a series of Pb(Zr_0.5Ti_0.5)_0.7(Zn_1/3Nb_2/3)_0.3O₃-based ceramics, denoted as xCe-0.3PZN-PZT (x = 1–4 mol%), were synthesized via a conventional solid-state reaction route. Among these, the composition with 2 mol% Ce exhibited the most promising electromechanical performance, achieving a large electric-field-induced strain of 0.178 % and a converse piezoelectric coefficient (d₃₃^*) of 590 pm/V under an applied field of 30 kV/cm, along with a low strain hysteresis of 10.4 %. In-situ high-temperature characterizations demonstrated a room-temperature piezoelectric coefficient (d₃₃) value of 467 pC/N and a high electromechanical coupling factor of 65.4 %. Importantly, the d₃₃ value exhibited minimal fluctuation, remaining within ±10 % of its initial magnitude over a wide temperature range from 30 °C to 230 °C. Structural analyses based on X-ray diffraction and piezoresponse force microscopy revealed that Ce doping induces nanoscale structural heterogeneity, which enhances domain wall mobility and contributes to the observed performance. These results offer a compelling strategy for designing thermally robust, high-performance lead-based piezoceramics suitable for deployment in demanding application environments.