Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Sivacarendran Balendhran; Junkai Deng; Jian Zhen Ou; Sumeet Walia; James Scott; Jianshi Tang; Kang L. Wang; Matthew R. Field; Salvy Russo; Serge Zhuiykov; Michael S. Strano; Nikhil Medhekar; Sharath Sriram; Madhu Bhaskaran; Kourosh Kalantar-Zadeh

doi:10.1002/adma.201203346

Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Sivacarendran Balendhran
, Junkai Deng
, Jian Zhen Ou
, Sumeet Walia
, James Scott
, Jianshi Tang
, Kang L. Wang
, Matthew R. Field
, Salvy Russo
, Serge Zhuiykov
, Michael S. Strano
, Nikhil Medhekar
, Sharath Sriram
, Madhu Bhaskaran
, Kourosh Kalantar-Zadeh

Royal Melbourne Institute of Technology University
Monash University
University of California at Los Angeles
CSIRO
Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

385 Scopus citations

Abstract

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO₃ can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO₃ of ∼11 nm thickness and carrier mobilities larger than 1100 cm² V^-1 s^-1 are obtained.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	1
DOIs	https://doi.org/10.1002/adma.201203346
State	Published - 4 Jan 2013
Externally published	Yes

Keywords

MoO
carrier mobility
field effect transistors
intercalation
two-dimensional materials

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10.1002/adma.201203346

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abstract = "We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V-1 s-1 are obtained.",

keywords = "MoO, carrier mobility, field effect transistors, intercalation, two-dimensional materials",

author = "Sivacarendran Balendhran and Junkai Deng and Ou, \{Jian Zhen\} and Sumeet Walia and James Scott and Jianshi Tang and Wang, \{Kang L.\} and Field, \{Matthew R.\} and Salvy Russo and Serge Zhuiykov and Strano, \{Michael S.\} and Nikhil Medhekar and Sharath Sriram and Madhu Bhaskaran and Kourosh Kalantar-Zadeh",

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doi = "10.1002/adma.201203346",

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T1 - Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

AU - Balendhran, Sivacarendran

AU - Deng, Junkai

AU - Ou, Jian Zhen

AU - Walia, Sumeet

AU - Scott, James

AU - Tang, Jianshi

AU - Wang, Kang L.

AU - Field, Matthew R.

AU - Russo, Salvy

AU - Zhuiykov, Serge

AU - Strano, Michael S.

AU - Medhekar, Nikhil

AU - Sriram, Sharath

AU - Bhaskaran, Madhu

AU - Kalantar-Zadeh, Kourosh

PY - 2013/1/4

Y1 - 2013/1/4

N2 - We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V-1 s-1 are obtained.

AB - We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V-1 s-1 are obtained.

KW - MoO

KW - carrier mobility

KW - field effect transistors

KW - intercalation

KW - two-dimensional materials

UR - https://www.scopus.com/pages/publications/84872016726

U2 - 10.1002/adma.201203346

DO - 10.1002/adma.201203346

M3 - 文章

AN - SCOPUS:84872016726

SN - 0935-9648

VL - 25

SP - 109

EP - 114

JO - Advanced Materials

JF - Advanced Materials

IS - 1

ER -

Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Abstract

Keywords

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