Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer

L. Jin; C. L. Jia; I. Vrejoiu

doi:10.1063/1.4897144

Engineering 180° ferroelectric domains in epitaxial PbTiO₃ thin films by varying the thickness of the underlying (La,Sr)MnO₃ layer

L. Jin
, C. L. Jia
, I. Vrejoiu

Faculty of Electronic and Information Engineering

Jülich Research Centre
Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Epitaxial ferroelectric thin films of PbTiO₃ (PTO) grown on top of nominally La_0.7Sr_0.3MnO₃ (LSMO) submicron hillocks on Nb-doped SrTiO₃ (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c-axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.

Original language	English
Article number	132903
Journal	Applied Physics Letters
Volume	105
Issue number	13
DOIs	https://doi.org/10.1063/1.4897144
State	Published - 29 Sep 2014

Access to Document

10.1063/1.4897144

Cite this

@article{acdc799cdfb943118ec77f89f55313ef,

title = "Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer",

abstract = "Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on Nb-doped SrTiO3 (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c-axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.",

author = "L. Jin and Jia, \{C. L.\} and I. Vrejoiu",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = sep,

day = "29",

doi = "10.1063/1.4897144",

language = "英语",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer

AU - Jin, L.

AU - Jia, C. L.

AU - Vrejoiu, I.

PY - 2014/9/29

Y1 - 2014/9/29

N2 - Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on Nb-doped SrTiO3 (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c-axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.

AB - Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on Nb-doped SrTiO3 (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c-axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.

UR - https://www.scopus.com/pages/publications/84907661905

U2 - 10.1063/1.4897144

DO - 10.1063/1.4897144

M3 - 文章

AN - SCOPUS:84907661905

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132903

ER -

Engineering 180° ferroelectric domains in epitaxial PbTiO₃ thin films by varying the thickness of the underlying (La,Sr)MnO₃ layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this