Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme

F. Hatem; Z. Chai; W. Zhang; A. Fantini; R. Degraeve; S. Clima; D. Garbin; J. Robertson; Y. Guo; J. F. Zhang; J. Marsland; P. Freitas; L. Goux; G. S. Kar

doi:10.1109/IEDM19573.2019.8993448

Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme

F. Hatem
, Z. Chai
, W. Zhang
, A. Fantini
, R. Degraeve
, S. Clima
, D. Garbin
, J. Robertson
, Y. Guo
, J. F. Zhang
, J. Marsland
, P. Freitas
, L. Goux
, G. S. Kar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

25 Scopus citations

Abstract

Selector device is critical in high-density cross-point resistive switching memory arrays for suppressing the sneak leakage current path. Ge_xSe_1-x based ovonic threshold switch (OTS) selectors have recently demonstrated strong performance with high on-state current, nonlinearity and endurance. Detailed study of its reliability is still lacking and the understanding on the responsible mechanisms is limited. In this work, for the first time, the endurance degradation mechanism of Ge-rich Ge_xSe_1-x OTS is identified. Accumulation of slow defects that remain delocalized at off-state and GeSe segregation/crystallization during cycling lead to the recoverable and non-recoverable leakage current, respectively. Most importantly, a refreshing program scheme is developed to recover and prevent the OTS degradation and the endurance can be therefore improved by more than five orders without adding additional material elements or process steps.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993448
State	Published - Dec 2019
Externally published	Yes
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	7/12/19 → 11/12/19

Access to Document

10.1109/IEDM19573.2019.8993448

Cite this

Hatem, F., Chai, Z., Zhang, W., Fantini, A., Degraeve, R., Clima, S., Garbin, D., Robertson, J., Guo, Y., Zhang, J. F., Marsland, J., Freitas, P., Goux, L., & Kar, G. S. (2019). Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993448 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993448

@inproceedings{fbadc02574f94b5bb88eb171533da542,

title = "Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme",

abstract = "Selector device is critical in high-density cross-point resistive switching memory arrays for suppressing the sneak leakage current path. GexSe1-x based ovonic threshold switch (OTS) selectors have recently demonstrated strong performance with high on-state current, nonlinearity and endurance. Detailed study of its reliability is still lacking and the understanding on the responsible mechanisms is limited. In this work, for the first time, the endurance degradation mechanism of Ge-rich GexSe1-x OTS is identified. Accumulation of slow defects that remain delocalized at off-state and GeSe segregation/crystallization during cycling lead to the recoverable and non-recoverable leakage current, respectively. Most importantly, a refreshing program scheme is developed to recover and prevent the OTS degradation and the endurance can be therefore improved by more than five orders without adding additional material elements or process steps.",

author = "F. Hatem and Z. Chai and W. Zhang and A. Fantini and R. Degraeve and S. Clima and D. Garbin and J. Robertson and Y. Guo and Zhang, \{J. F.\} and J. Marsland and P. Freitas and L. Goux and Kar, \{G. S.\}",

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year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993448",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hatem, F, Chai, Z, Zhang, W, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L & Kar, GS 2019, Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993448, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993448

Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme. / Hatem, F.; Chai, Z.; Zhang, W. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993448 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hatem, F.

AU - Chai, Z.

AU - Zhang, W.

AU - Fantini, A.

AU - Degraeve, R.

AU - Clima, S.

AU - Garbin, D.

AU - Robertson, J.

AU - Guo, Y.

AU - Zhang, J. F.

AU - Marsland, J.

AU - Freitas, P.

AU - Goux, L.

AU - Kar, G. S.

PY - 2019/12

Y1 - 2019/12

N2 - Selector device is critical in high-density cross-point resistive switching memory arrays for suppressing the sneak leakage current path. GexSe1-x based ovonic threshold switch (OTS) selectors have recently demonstrated strong performance with high on-state current, nonlinearity and endurance. Detailed study of its reliability is still lacking and the understanding on the responsible mechanisms is limited. In this work, for the first time, the endurance degradation mechanism of Ge-rich GexSe1-x OTS is identified. Accumulation of slow defects that remain delocalized at off-state and GeSe segregation/crystallization during cycling lead to the recoverable and non-recoverable leakage current, respectively. Most importantly, a refreshing program scheme is developed to recover and prevent the OTS degradation and the endurance can be therefore improved by more than five orders without adding additional material elements or process steps.

AB - Selector device is critical in high-density cross-point resistive switching memory arrays for suppressing the sneak leakage current path. GexSe1-x based ovonic threshold switch (OTS) selectors have recently demonstrated strong performance with high on-state current, nonlinearity and endurance. Detailed study of its reliability is still lacking and the understanding on the responsible mechanisms is limited. In this work, for the first time, the endurance degradation mechanism of Ge-rich GexSe1-x OTS is identified. Accumulation of slow defects that remain delocalized at off-state and GeSe segregation/crystallization during cycling lead to the recoverable and non-recoverable leakage current, respectively. Most importantly, a refreshing program scheme is developed to recover and prevent the OTS degradation and the endurance can be therefore improved by more than five orders without adding additional material elements or process steps.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -

Hatem F, Chai Z, Zhang W, Fantini A, Degraeve R, Clima S et al. Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993448. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993448