Electronic relaxation of deep bulk trap in CaCu3Ti4O12 ceramics: Post-annealing studies

Ran Jia; Jianying Li; Linlin Hou; Huan Li

doi:10.1109/ICPADM.2015.7295402

Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics: Post-annealing studies

Ran Jia
, Jianying Li
, Linlin Hou
, Huan Li

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu₃Ti₄O₁₂ ceramics was investigated from -140 to 200 °C. Sintering at 1080 °C was followed by a cooling rate of 2.5 °C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O₂, then N₂ and O₂ again at 950 °C. It was found that annealing in O₂ can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N₂. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O₂. Trapped electron relaxation processes caused by V_o⁺ and V₀⁺⁺ in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N₂ and then re-created by annealing in O₂. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss.

Original language	English
Title of host publication	ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	836-839
Number of pages	4
ISBN (Electronic)	9781479989034
DOIs	https://doi.org/10.1109/ICPADM.2015.7295402
State	Published - 8 Oct 2015
Event	11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015 - Sydney, Australia Duration: 19 Jul 2015 → 22 Jul 2015

Publication series

Name	Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
Volume	2015-October

Conference

Conference	11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015
Country/Territory	Australia
City	Sydney
Period	19/07/15 → 22/07/15

Keywords

annealing
CaCuTiO ceramics
dielectrics
varistor

Access to Document

10.1109/ICPADM.2015.7295402

Cite this

Jia, R., Li, J., Hou, L., & Li, H. (2015). Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics: Post-annealing studies. In ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials (pp. 836-839). Article 7295402 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICPADM.2015.7295402

Jia, Ran ; Li, Jianying ; Hou, Linlin et al. / Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics : Post-annealing studies. ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 836-839 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials).

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title = "Electronic relaxation of deep bulk trap in CaCu3Ti4O12 ceramics: Post-annealing studies",

abstract = "The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu3Ti4O12 ceramics was investigated from -140 to 200 °C. Sintering at 1080 °C was followed by a cooling rate of 2.5 °C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O2, then N2 and O2 again at 950 °C. It was found that annealing in O2 can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N2. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O2. Trapped electron relaxation processes caused by Vo+ and V0++ in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N2 and then re-created by annealing in O2. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss.",

keywords = "annealing, CaCuTiO ceramics, dielectrics, varistor",

author = "Ran Jia and Jianying Li and Linlin Hou and Huan Li",

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Jia, R, Li, J, Hou, L & Li, H 2015, Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics: Post-annealing studies. in ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials., 7295402, Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., pp. 836-839, 11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015, Sydney, Australia, 19/07/15. https://doi.org/10.1109/ICPADM.2015.7295402

Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics: Post-annealing studies. / Jia, Ran; Li, Jianying; Hou, Linlin et al.
ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc., 2015. p. 836-839 7295402 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Li, Huan

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N2 - The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu3Ti4O12 ceramics was investigated from -140 to 200 °C. Sintering at 1080 °C was followed by a cooling rate of 2.5 °C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O2, then N2 and O2 again at 950 °C. It was found that annealing in O2 can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N2. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O2. Trapped electron relaxation processes caused by Vo+ and V0++ in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N2 and then re-created by annealing in O2. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss.

AB - The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu3Ti4O12 ceramics was investigated from -140 to 200 °C. Sintering at 1080 °C was followed by a cooling rate of 2.5 °C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O2, then N2 and O2 again at 950 °C. It was found that annealing in O2 can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N2. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O2. Trapped electron relaxation processes caused by Vo+ and V0++ in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N2 and then re-created by annealing in O2. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss.

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KW - varistor

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Jia R, Li J, Hou L, Li H. Electronic relaxation of deep bulk trap in CaCu₃Ti₄O₁₂ ceramics: Post-annealing studies. In ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc. 2015. p. 836-839. 7295402. (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials). doi: 10.1109/ICPADM.2015.7295402