Electronic and optical properties of CuInSe2 from ab-initio calculations

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this article, optical and electronic properties of CIS are studied from DFT calculations. For the exchange-correction energy, we employ GGA in the form of RPBE. The interactions between valence electrons and ionic core are represented by the ultrasoft pseudo potential. By analyzing the results, a mixed bonding state is found to exist in CIS, which is a strong ionic bond with a much weaker covalent bond. The interactions between Cu and Se are much stronger than that between In and Se. It was clarified that CuInSe2 has a direct band gap. We also calculate various optical properties of this material, such as reflection index, refraction index, adsorption spectrum and dielectric constant. For the adsorption spectrum, there are six peaks: 3.1, 7.6, 10.0, 16.1, 19.0 eV, 21.0 eV and the strongest adsorption peak is located in ultraviolet region.

Original languageEnglish
Pages (from-to)5990-5995
Number of pages6
JournalWuli Xuebao/Acta Physica Sinica
Volume56
Issue number10
DOIs
StatePublished - Oct 2007
Externally publishedYes

Keywords

  • CIS
  • DFT
  • Photo-electron convection
  • Semiconductor
  • Solar energy materials

Fingerprint

Dive into the research topics of 'Electronic and optical properties of CuInSe2 from ab-initio calculations'. Together they form a unique fingerprint.

Cite this